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Results 261-280 of 330
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Publication Date2015-10
Semiconductor–Insulator–Semiconductor Diode Consisting of Monolayer MoS2, h-BN, and GaN Heterostructure
ACS NANO, v.9, no.10, pp.10032 - 10038
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Publication Date2015-09
The characterization of Co-nanoparticles supported on graphene
RSC ADVANCES, v.5, no.92, pp.75600 - 75606
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Publication Date2015-09
Chemically Modulated Band Gap in Bilayer Graphene Memory Transistors with High On/Off Ratio
ACS NANO, v.9, no.9, pp.9034 - 9042
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Publication Date2015-09
Photoluminescence wavelength variation of monolayer MoS2 by oxygen plasma treatment
THIN SOLID FILMS, v.590, pp.318 - 323
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Publication Date2015-08
Phase patterning for ohmic homojunction contact in MoTe2
Highly Cited Paper
SCIENCE, v.349, no.6248, pp.625 - 628
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Publication Date2015-08
A Van Der Waals Homojunction: Ideal p–n Diode Behavior in MoSe2
ADVANCED MATERIALS, v.27, no.37, pp.5534 - 5540
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Publication Date2015-08
Electrical and Optical Characterization of MoS2 with Sulfur Vacancy Passivation by Treatment with Alkanethiol Molecules
ACS NANO, v.9, no.8, pp.8044 - 8053
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Publication Date2015-08
Towards Wafer-Scale Monocrystalline Graphene Growth and Characterization
SMALL, v.11, no.29, pp.3512 - 3528
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Publication Date2015-07
Carbon-Based Materials for Lithium-Ion Batteries, Electrochemical Capacitors, and Their Hybrid Devices
CHEMSUSCHEM, v.8, no.14, pp.2284 - 2311
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Publication Date2015-07
Characterization of the structural defects in CVD-grown monolayered MoS2 using near-field photoluminescence imaging
NANOSCALE, v.7, no.28, pp.11909 - 11914
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Publication Date2015-07
High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering
Highly Cited Paper
NATURE COMMUNICATIONS, v.6, pp.7809
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Publication Date2015-07
Efficient Exciton-Plasmon Conversion in Ag Nanowire/Monolayer MoS2 Hybrids: Direct Imaging and Quantitative Estimation of Plasmon Coupling and Propagation
ADVANCED OPTICAL MATERIALS, v.3, no.7, pp.943 - 947
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Publication Date2015-06
Controllable poly-crystalline bilayered and multilayered graphene film growth by reciprocal chemical vapor deposition
NANOSCALE, v.7, no.23, pp.10357 - 10361
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Publication Date2015-06
Phase stability and Raman vibration of the molybdenum ditelluride (MoTe2) monolayer
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, v.17, no.22, pp.14866 - 14871
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Publication Date2015-06
Graphene/ferroelectrics/graphene hybrid structure: Asymmetric doping of graphene layers
APPLIED PHYSICS LETTERS, v.106, no.24, pp.243104
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Publication Date2015-06
Bandgap opening in few-layered monoclinic MoTe2
Highly Cited Paper
NATURE PHYSICS, v.11, no.6, pp.482 - U144
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Publication Date2015-06
Monitoring defects on monolayer graphene using nematic liquid crystals
OPTICS EXPRESS, v.23, no.11, pp.14162 - 14167
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Publication Date2015-06
Phase-Engineered Synthesis of Centimeter-Scale 1T′- and 2H-Molybdenum Ditelluride Thin Films
ACS NANO, v.9, no.6, pp.6548 - 6554
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Publication Date2015-05
In situ synthesis of a large area boron nitride/graphene monolayer/boron nitride film by chemical vapor deposition
NANOSCALE, v.7, no.17, pp.7574 - 7579
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Publication Date2015-05
Synthesis of Centimeter-Scale Monolayer Tungsten Disulfide Film on Gold Foils
ACS NANO, v.9, no.5, pp.5510 - 5519
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