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나노 구조 물리 연구단
나노구조물리 연구단
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Semiconductor–Insulator–Semiconductor Diode Consisting of Monolayer MoS2, h-BN, and GaN Heterostructure

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Title
Semiconductor–Insulator–Semiconductor Diode Consisting of Monolayer MoS2, h-BN, and GaN Heterostructure
Author(s)
Hyun Jeong; Seungho Bang; Hye Min Oh; Hyeon Jun Jeong; Sung-Jin An; Gang Hee Han; Hyun Kim; Ki Kang Kim; Jin Cheol Park; Young Hee Lee; Gilles Lerondel; Mun Seok Jeong
Publication Date
2015-10
Journal
ACS NANO, v.9, no.10, pp.10032 - 10038
Publisher
AMER CHEMICAL SOC
Abstract
We propose a semiconductorinsulatorsemiconductor (SIS) heterojunction diode consisting of monolayer (1-L) MoS2, hexagonal boron nitride (h-BN), and epitaxial p-GaN that can be applied to high-performance nanoscale optoelectronics. The layered materials of 1-L MoS2 and h-BN, grown by chemical vapor deposition, were vertically stacked by a wet-transfer method on a p-GaN layer. The final structure was verified by confocal photoluminescence and Raman spectroscopy. Currentvoltage (IV) measurements were conducted to compare the device performance with that of a more classical pn structure. In both structures (the pn and SIS heterojunction diode), clear current-rectifying characteristics were observed. In particular, a current and threshold voltage were obtained for the SIS structure that was higher compared to that of the pn structure. This indicated that tunneling is the predominant carrier transport mechanism. In addition, the photoresponse of the SIS structure induced by the illumination of visible light was observed by photocurrent measurements.
URI
https://pr.ibs.re.kr/handle/8788114/1854
ISSN
1936-0851
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
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