High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering Highly Cited Paper

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Title
High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering
Author(s)
David J. Perello; Sang Hoon Chae; Seunghyun Song; Young Hee Lee
Publication Date
2015-07
Journal
NATURE COMMUNICATIONS, v.6, no., pp.7809 -
Publisher
NATURE PUBLISHING GROUP
Abstract
Recent work has demonstrated excellent p-type field-effect switching in exfoliated black phosphorus, but type control has remained elusive. Here, we report unipolar n-type black phosphorus transistors with switching polarity control via contact-metal engineering and flake thickness, combined with oxygen and moisture-free fabrication. With aluminium contacts to black phosphorus, a unipolar to ambipolar transition occurs as flake thickness increases from 3 to 13 nm. The 13-nm aluminium-contacted flake displays graphene-like symmetric hole and electron mobilities up to 950 cm 2 V â '1 s â '1 at 300 K, while a 3 nm flake displays unipolar n-type switching with on/off ratios greater than 10 5 (10 7) and electron mobility of 275 (630) cm 2 V â '1 s â '1 at 300 K (80 K). For palladium contacts, p-type behaviour dominates in thick flakes, while 2.5-7 nm flakes have symmetric ambipolar transport. These results demonstrate a leap in n-type performance and exemplify the logical switching capabilities of black phosphorus
URI
https://pr.ibs.re.kr/handle/8788114/1738
ISSN
2041-1723
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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