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나노 구조 물리 연구단
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Characterization of the structural defects in CVD-grown monolayered MoS2 using near-field photoluminescence imaging

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Title
Characterization of the structural defects in CVD-grown monolayered MoS2 using near-field photoluminescence imaging
Author(s)
Yongjun Lee; Seki Park; Hyun Kim; Gang Hee Han; Young Hee Lee; Jeongyong Kim
Publication Date
2015-07
Journal
NANOSCALE, v.7, no.28, pp.11909 - 11914
Publisher
ROYAL SOC CHEMISTRY
Abstract
Structural defects can critically influence the electrical and optical properties of monolayered molybdenum disulfide (MoS2) grown by chemical vapor deposition (CVD); thus, convenient optical methods that can visualize grain boundaries (GBs) and other structural defects are in great demand. Although photoluminescence (PL) imaging can identify the presence of relatively large defects, the limited spatial resolution of PL imaging prevents the identification of nanosized structural defects in the monolayered MoS2. Additionally, the origin of the PL signal contrast observed at certain types of structural defects, such as GBs, is not yet understood. Here, we present near-field PL images of CVD-grown monolayered MoS2, collected to identify nanosized line defects and adlayer defects in the monolayered MoS2. Our results of correlated scanning electron microscopy imaging and the inspection of near-field PL profiles of line defects and GBs suggest that decreased PL on GBs is due to the local physical damage of the MoS2 film rather than due to the presence of localized states. This journal is © The Royal Society of Chemistry
URI
https://pr.ibs.re.kr/handle/8788114/1798
ISSN
2040-3364
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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