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IBS Publications RepositoryCenter for Integrated Nanostructure Physics(나노구조물리 연구단)1. Journal Papers (저널논문)

A Van Der Waals Homojunction: Ideal p–n Diode Behavior in MoSe2

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Title
A Van Der Waals Homojunction: Ideal p–n Diode Behavior in MoSe2
Author(s)
Youngjo Jin; Dong Hoon Keum; Sung-Jin An; Joonggyu Kim; Hyun Seok Lee; Young Hee Lee
Publication Date
2015-08
Journal
ADVANCED MATERIALS, v.27, no.37, pp.5534 - 5540
Publisher
WILEY-V C H VERLAG GMBH
URI
https://pr.ibs.re.kr/handle/8788114/1920
DOI
10.1002/adma.201502278
ISSN
0935-9648
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
Files in This Item:
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