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IBS Publications RepositoryCenter for Integrated Nanostructure Physics(나노구조물리 연구단)1. Journal Papers (저널논문)
A Van Der Waals Homojunction: Ideal p–n Diode Behavior in MoSe2
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Youngjo Jin | - |
| dc.contributor.author | Dong Hoon Keum | - |
| dc.contributor.author | Sung-Jin An | - |
| dc.contributor.author | Joonggyu Kim | - |
| dc.contributor.author | Hyun Seok Lee | - |
| dc.contributor.author | Young Hee Lee | - |
| dc.date.available | 2016-01-07T09:11:30Z | - |
| dc.date.created | 2015-10-14 | - |
| dc.date.issued | 2015-08 | - |
| dc.identifier.issn | 0935-9648 | - |
| dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/1920 | - |
| dc.description.uri | 1 | - |
| dc.language | 영어 | - |
| dc.publisher | WILEY-V C H VERLAG GMBH | - |
| dc.title | A Van Der Waals Homojunction: Ideal p–n Diode Behavior in MoSe2 | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.identifier.wosid | 000362727900011 | - |
| dc.identifier.scopusid | 2-s2.0-84942824398 | - |
| dc.identifier.rimsid | 21380 | ko |
| dc.date.tcdate | 2018-10-01 | - |
| dc.contributor.affiliatedAuthor | Youngjo Jin | - |
| dc.contributor.affiliatedAuthor | Dong Hoon Keum | - |
| dc.contributor.affiliatedAuthor | Sung-Jin An | - |
| dc.contributor.affiliatedAuthor | Joonggyu Kim | - |
| dc.contributor.affiliatedAuthor | Hyun Seok Lee | - |
| dc.contributor.affiliatedAuthor | Young Hee Lee | - |
| dc.identifier.doi | 10.1002/adma.201502278 | - |
| dc.identifier.bibliographicCitation | ADVANCED MATERIALS, v.27, no.37, pp.5534 - 5540 | - |
| dc.citation.title | ADVANCED MATERIALS | - |
| dc.citation.volume | 27 | - |
| dc.citation.number | 37 | - |
| dc.citation.startPage | 5534 | - |
| dc.citation.endPage | 5540 | - |
| dc.date.scptcdate | 2018-10-01 | - |
| dc.description.wostc | 59 | - |
| dc.description.scptc | 59 | - |
| dc.embargo.liftdate | 9999-12-31 | - |
| dc.embargo.terms | 9999-12-31 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordPlus | TRANSITION-METAL DICHALCOGENIDES | - |
| dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
| dc.subject.keywordPlus | MONOLAYER MOS2 | - |
| dc.subject.keywordPlus | GRAPHENE | - |
| dc.subject.keywordPlus | HETEROJUNCTION | - |
| dc.subject.keywordPlus | PHOTOCURRENT | - |
| dc.subject.keywordPlus | MOLYBDENUM | - |
| dc.subject.keywordPlus | GENERATION | - |
| dc.subject.keywordPlus | RESISTANCE | - |
| dc.subject.keywordPlus | JUNCTIONS | - |
| dc.subject.keywordAuthor | elemental doping | - |
| dc.subject.keywordAuthor | p-n diodes | - |
| dc.subject.keywordAuthor | p-type MoSe<inf>2</inf> | - |
| dc.subject.keywordAuthor | transition metal dichalcogenides | - |
| dc.subject.keywordAuthor | van der Waals homojunction | - |
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