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나노구조물리연구단
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A Van Der Waals Homojunction: Ideal p–n Diode Behavior in MoSe2

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dc.contributor.authorYoungjo Jin-
dc.contributor.authorDong Hoon Keum-
dc.contributor.authorSung-Jin An-
dc.contributor.authorJoonggyu Kim-
dc.contributor.authorHyun Seok Lee-
dc.contributor.authorYoung Hee Lee-
dc.date.available2016-01-07T09:11:30Z-
dc.date.created2015-10-14-
dc.date.issued2015-08-
dc.identifier.issn0935-9648-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/1920-
dc.description.uri1-
dc.language영어-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.titleA Van Der Waals Homojunction: Ideal p–n Diode Behavior in MoSe2-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000362727900011-
dc.identifier.scopusid2-s2.0-84942824398-
dc.identifier.rimsid21380ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorYoungjo Jin-
dc.contributor.affiliatedAuthorDong Hoon Keum-
dc.contributor.affiliatedAuthorSung-Jin An-
dc.contributor.affiliatedAuthorJoonggyu Kim-
dc.contributor.affiliatedAuthorHyun Seok Lee-
dc.contributor.affiliatedAuthorYoung Hee Lee-
dc.identifier.doi10.1002/adma.201502278-
dc.identifier.bibliographicCitationADVANCED MATERIALS, v.27, no.37, pp.5534 - 5540-
dc.citation.titleADVANCED MATERIALS-
dc.citation.volume27-
dc.citation.number37-
dc.citation.startPage5534-
dc.citation.endPage5540-
dc.date.scptcdate2018-10-01-
dc.description.wostc59-
dc.description.scptc59-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusTRANSITION-METAL DICHALCOGENIDES-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusMONOLAYER MOS2-
dc.subject.keywordPlusGRAPHENE-
dc.subject.keywordPlusHETEROJUNCTION-
dc.subject.keywordPlusPHOTOCURRENT-
dc.subject.keywordPlusMOLYBDENUM-
dc.subject.keywordPlusGENERATION-
dc.subject.keywordPlusRESISTANCE-
dc.subject.keywordPlusJUNCTIONS-
dc.subject.keywordAuthorelemental doping-
dc.subject.keywordAuthorp-n diodes-
dc.subject.keywordAuthorp-type MoSe<inf>2</inf>-
dc.subject.keywordAuthortransition metal dichalcogenides-
dc.subject.keywordAuthorvan der Waals homojunction-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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