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나노 구조 물리 연구단
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Chemically Modulated Band Gap in Bilayer Graphene Memory Transistors with High On/Off Ratio

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Title
Chemically Modulated Band Gap in Bilayer Graphene Memory Transistors with High On/Off Ratio
Author(s)
Si Young Lee; Dinh Loc Duong; Quoc An Vu; Youngjo Jin; Philip Kim; Young Hee Lee
Publication Date
2015-09
Journal
ACS NANO, v.9, no.9, pp.9034 - 9042
Publisher
AMER CHEMICAL SOC
Abstract
We report a chemically conjugated bilayer graphene field effect transistor demonstrating a high on/off ratio without significant degradation of the on-current and mobility. This was realized by introducing environmentally stable benzyl viologen as an electron-donating group and atmospheric dopants as an electron-withdrawing group, which were used as dopants for the bottom and top of the bilayer graphene, respectively. A high mobility of ∼3100 cm2 V-1 s-1 with a high on/off ratio of 76.1 was obtained at room temperature without significant degradation of the on-current. This is attributed to low charge scattering due to physisorbed dopants without provoking sp3 structural disorders. By utilizing our band-gap-opened bilayer graphene, excellent nonvolatile memory switching behavior was demonstrated with a clear program/erase state by applying pulse gate bias. The initial program/erase current ratio of ∼34.5 was still retained at higher than 10 even after 104 s. © 2015 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/2152
ISSN
1936-0851
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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