Controllable poly-crystalline bilayered and multilayered graphene film growth by reciprocal chemical vapor deposition

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Title
Controllable poly-crystalline bilayered and multilayered graphene film growth by reciprocal chemical vapor deposition
Author(s)
Wu, Q; Jung, SJ; Jang, SK; Lee, J; Jeon, I; Suh, H; Kim, YH; Young Hee Lee; Lee, S; Young Jae Song
Publication Date
2015-06
Journal
NANOSCALE, v.7, no.23, pp.10357 - 10361
Publisher
ROYAL SOC CHEMISTRY
Abstract
We report the selective growth of large-area bilayered graphene film and multilayered graphene film on copper. This growth was achieved by introducing a reciprocal chemical vapor deposition (CVD) process that took advantage of an intermediate h-BN layer as a sacrificial template for graphene growth. A thin h-BN film, initially grown on the copper substrate using CVD methods, was locally etched away during the subsequent graphene growth under residual H-2 and CH4 gas flows. Etching of the h-BN layer formed a channel that permitted the growth of additional graphene adlayers below the existing graphene layer. Bilayered graphene typically covers an entire Cu foil with domain sizes of 10-50 mu m, whereas multilayered graphene can be epitaxially grown to form islands a few hundreds of microns in size. This new mechanism, in which graphene growth proceeded simultaneously with h-BN etching, suggests a potential approach to control graphene layers for engineering the band structures of large-area graphene for electronic device applications
URI
https://pr.ibs.re.kr/handle/8788114/1799
ISSN
2040-3364
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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