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나노 구조 물리 연구단
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Graphene/ferroelectrics/graphene hybrid structure: Asymmetric doping of graphene layers

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Title
Graphene/ferroelectrics/graphene hybrid structure: Asymmetric doping of graphene layers
Author(s)
Dinh Loc Duong; Si Young Lee; Seong Kyu Kim; Young Hee Lee
Publication Date
2015-06
Journal
APPLIED PHYSICS LETTERS, v.106, no.24, pp.243104 -
Publisher
AMER INST PHYSICS
Abstract
We report graphene/ferroelectric/graphene hybrid structure to demonstrate an asymmetrical doping in two graphene layers, one side with electrons and another side with holes. Two ferroelectrics, a poly(vinylidenefluoride) (PVDF) and a hydrofluorinated graphene, were used to demonstrate the concept with density functional calculations, revealing the Fermi level shift of 0.35 and 0.75 eV, respectively. This concept was confirmed by Raman spectroscopy using graphene/poly(vinylidenefluoride-co-trifluoroethylene)(P(VDF-TrFE))/graphene hybrid, which can easily form beta-phase close to our simulation model. G-band peak position was downshifted for electron doping and upshifted for hole doping. This hybrid structure opens an opportunity to study bilayer graphene system with a controllable thickness for a wide range of high carrier concentration. (C) 2015 AIP Publishing LLC
URI
http://pr.ibs.re.kr/handle/8788114/1751
DOI
10.1063/1.4922448
ISSN
0003-6951
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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