Synthesis of Centimeter-Scale Monolayer Tungsten Disulfide Film on Gold Foils

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Title
Synthesis of Centimeter-Scale Monolayer Tungsten Disulfide Film on Gold Foils
Author(s)
Seok Joon Yun; Sang Hoon Chae; Hyun Kim; Jin Cheol Park; Ji-Hoon Park; Gang Hee Han; Lee, JS; Kim, SM; Hye Min Oh; Jinbong Seok; Mun Seok Jeong; Kim, KK; Young Hee Lee
Publication Date
2015-05
Journal
ACS NANO, v.9, no.5, pp.5510 - 5519
Publisher
AMER CHEMICAL SOC
Abstract
We report the synthesis of centimeter-scale monolayer WS2 on gold foil by chemical vapor deposition. The limited tungsten and sulfur solubility in gold foil allows monolayer WS2 film growth on gold surface. To ensure the coverage uniformity of monolayer WS2 film, the tungsten source-coated substrate was placed in parallel with Au foil under hydrogen sulfide atmosphere. The high growth temperature near 935 degrees C helps to increase a domain size up to 420 mu m. Gold foil is reused for the repeatable growth after bubbling transfer. The WS2-based field effect transistor reveals an electron mobility of 20 cm(2) V-1 s(-1) with high on-off ratio of similar to 10(8) at room temperature, which is the highest reported value from previous reports of CVD-grown WS2 samples. The on-off ratio of integrated multiple FETs on the large area WS2 film on SiO2 (300 nm)/Si substrate shows within the same order, implying reasonable uniformity of WS2 FET device characteristics over a large area of 3 x 1.5 cm(2)
URI
https://pr.ibs.re.kr/handle/8788114/1765
ISSN
1936-0851
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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