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Lee, Young Hee

Center: 나노구조물리 연구단

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Results 81-100 of 309

Publication Date2020-10 Decelerated Hot Carrier Cooling in Graphene via Nondissipative Carrier Injection from MoS2
Minh Dao Tran; Sung-Gyu Lee; Sunam Jeon, et al

ACS NANO, v.14, no.10, pp.13905 - 13912
Publication Date2020-10 Growth Mechanism of Alternating Defect Domains in Hexagonal WS2 via Inhomogeneous W‐Precursor Accumulation
Gwang Hwi An; Seok Joon Yun; Young Hee Lee, et al

SMALL, v.16, no.43, pp.2003326
Publication Date2020-09-22 Dielectric Nanowire Hybrids for Plasmon-Enhanced Light-Matter Interaction in 2D Semiconductors
Jung Ho Kim; Hyun Seok Lee; Gwang Hwi An, et al

ACS NANO, v.14, no.9, pp.11985 - 11994
Publication Date2020-09 An active carbon-nanotube polarizer-embedded electrode and liquid-crystal alignment
Tae Hyung Kim; Jong Gil Park; Yul Ki Kim, et al

NANOSCALE, v.12, no.34, pp.17698 - 17702
Publication Date2020-08 High-mobility junction field-effect transistor via graphene/MoS2 heterointerface
Taesoo Kim; Sidi Fan; Sanghyub Lee, et al

SCIENTIFIC REPORTS, v.10, no.1, pp.13101
Publication Date2020-08 High-temperature differences in plasmonic broadband absorber on PET and Si substrates
Jin Hee Kim; Sung-Gyu Lee; Teun-Teun Kim, et al

SCIENTIFIC REPORTS, v.10, no.1, pp.13279
Publication Date2020-08 Bandgap engineering of two-dimensional semiconductor materials Highly Cited Paper
A. Chaves; J. G. Azadani; Hussain Alsalman, et al

npj 2D Materials and Applications, v.4, no.1
Publication Date2020-07 Tailoring Domain Morphology in Monolayer NbSe2 and WxNb1–xSe2 Heterostructure
Sehwan Park; Seok Joon Yun; Yong In Kim, et al

ACS NANO, v.14, no.7, pp.8784 - 8792
Publication Date2020-06 Photoinduced Tuning of Schottky Barrier Height in Graphene/MoS2 Heterojunction for Ultrahigh Performance Short Channel Phototransistor
Ilmin Lee; Won Tae Kang; Ji Eun Kim, et al

ACS NANO, v.14, no.6, pp.7574 - 7580
Publication Date2020-06 Evidence of shallow band gap in ultrathin 1T '-MoTe2 via infrared spectroscopy
Jin Cheol Park; Eilho Jung; Sangyun Lee, et al

PHYSICAL REVIEW B, v.101, no.23, pp.235434
Publication Date2020-06 Gate modulation of the long-range magnetic order in a vanadium-doped WSe2 semiconductor
Dinh Loc Duong; Seong-Gon Kim; Young Hee Lee

AIP ADVANCES, v.10, no.6, pp.065220
Publication Date2020-06 Identifying Fibrillization State of Aβ Protein via Near-Field THz Conductance Measurement
Chaejeong Heo; Taewoo Ha; Chunjae You, et al

ACS NANO, v.14, no.6, pp.6548 - 6558
Publication Date2020-05 Ferromagnetic Order at Room Temperature in Monolayer WSe2 Semiconductor via Vanadium Dopant Highly Cited Paper
Seok Joon Yun; Dinh Loc Duong; Doan Manh Ha, et al

ADVANCED SCIENCE, v.7, no.9, pp.1903076
Publication Date2020-05 Wafer-scale high-quality Ag thin film using a ZnO buffer layer for plasmonic applications
Bo-Gwang Jung; Miyeon Cheon; Su Jae Kim, et al

APPLIED SURFACE SCIENCE, v.512, pp.145705
Publication Date2020-04 Carrier Multiplication in PbS Quantum Dots Anchored on a Au Tip using Conductive Atomic Force Microscopy
Sung-Tae Kim; Ji-Hee Kim; Young Hee Lee

ADVANCED MATERIALS, v.32, no.17, pp.1908461
Publication Date2020-04 Transfer assembly for two-dimensional van der Waals heterostructures
Sidi Fan; Quoc An Vu; Minh Dao Tran, et al

2D MATERIALS, v.7, no.2, pp.022005
Publication Date2020-04 Multi-layered carbon nanotube UV polariser for photo-alignment of liquid crystals
Hoon Sub Shin; Ramesh Mada; Tae Hyung Kim, et al

LIQUID CRYSTALS, v.47, no.11, pp.1604 - 1611
Publication Date2020-04 Monodispersed SnS nanoparticles anchored on carbon nanotubes for high-retention sodium-ion batteries
Thi Hoai Thuong Luu; Dinh Loc Duong; Tae Hoon Lee, et al

JOURNAL OF MATERIALS CHEMISTRY A, v.8, no.16, pp.7861 - 7869
Publication Date2020-04 Disentangling oxygen and water vapor effects on optoelectronic properties of monolayer tungsten disulfide
Hanyu Zhang; Jeremy R. Dunklin; Obadiah G. Reid, et al

NANOSCALE, v.12, no.15, pp.8344 - 8354
Publication Date2020-03 Temperature dependence of velocity saturation in a multilayer molybdenum disulfide transistor
Byoung Hee Moon; Hyunjin Ji; Jung Jun Bae, et al

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.35, no.3, pp.035030

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