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Gate modulation of the long-range magnetic order in a vanadium-doped WSe2 semiconductor

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Title
Gate modulation of the long-range magnetic order in a vanadium-doped WSe2 semiconductor
Author(s)
Dinh Loc Duong; Seong-Gon Kim; Young Hee Lee
Subject
TRANSPORT
Publication Date
2020-06
Journal
AIP ADVANCES, v.10, no.6, pp.065220
Publisher
AMER INST PHYSICS
Abstract
© Author(s) 2020 Generation of spin-charge coupling by doping semiconductors with magnetic dopants is a promising approach for gate-tunable spintronic devices without applying an external magnetic field. Here, we demonstrate that the magnetic orders in V-doped WSe2 can be modulated by tuning carrier densities using ab initio calculations. We found that at a low V-doping concentration limit, the long-range ferromagnetic order is enhanced by increasing the hole density. In contrast, this long-range ferromagnetic order is suppressed at high electron density by compensating the p-type V dopant, originating from the strong localized antiferromagnetic coupling between V and W atoms and between V and Se atoms. The hole-mediated long-range magnetic exchange is similar to 70 meV, thus strongly suggesting the ferromagnetism in V-doped WSe2 at room temperature. Our findings on strong coupling between charge and spin order in V-doped WSe2 provide plenty of room for multifunctional gate-tunable spintronics
URI
https://pr.ibs.re.kr/handle/8788114/7807
DOI
10.1063/5.0010730
ISSN
2158-3226
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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