BROWSE

Related Scientist

CINAP's photo.

CINAP
나노구조물리 연구단
more info

ITEM VIEW & DOWNLOAD

Photoinduced Tuning of Schottky Barrier Height in Graphene/MoS2 Heterojunction for Ultrahigh Performance Short Channel Phototransistor

Cited 0 time in webofscience Cited 0 time in scopus
9 Viewed 0 Downloaded
Title
Photoinduced Tuning of Schottky Barrier Height in Graphene/MoS2 Heterojunction for Ultrahigh Performance Short Channel Phototransistor
Author(s)
Ilmin Lee; Won Tae Kang; Ji Eun Kim; Young Rae Kim; Ui Yeon Won; Young Hee Lee; Woo Jong Yu
Subject
graphene, ; molybdenum disulfide, ; phototransistor, ; Schottky barrier height, ; short channel
Publication Date
2020-06
Journal
ACS NANO, v.14, no.6, pp.7574 - 7580
Publisher
AMER CHEMICAL SOC
Abstract
© 2020 American Chemical Society Two-dimensional (2D) layered materials with properties such as a large surface-to-volume ratio, strong light interaction, and transparency are expected to be used in future optoelectronic applications. Many studies have focused on ways to increase absorption of 2D-layered materials for use in photodetectors. In this work, we demonstrate another strategy for improving photodetector performance using a graphene/MoS2 heterojunction phototransistor with a short channel length and a tunable Schottky barrier. The channel length of sub-30 nm, shorter than the diffusion length, decreases carrier recombination and carrier transit time in the channel and improves phototransistor performance. Furthermore, our graphene/MoS2 heterojunction phototransistor employed a tunable Schottky barrier that is only controlled by light and gate bias. It maintains a low dark current and an increased photocurrent. As a result, our graphene/MoS2 heterojunction phototransistor showed ultrahigh responsivity and detectivity of 2.2 × 105 A/W and 3.5 × 1013 Jones, respectively. This is a considerable improvement compared to previous pristine MoS2 phototransistors. We confirmed an effective method to develop phototransistors based on 2D materials and obtained ultrahigh performance of our phototransistor, which is promising for high-performance optoelectronic applications
URI
https://pr.ibs.re.kr/handle/8788114/7823
DOI
10.1021/acsnano.0c03425
ISSN
1936-0851
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
Files in This Item:
There are no files associated with this item.

qrcode

  • facebook

    twitter

  • Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
해당 아이템을 이메일로 공유하기 원하시면 인증을 거치시기 바랍니다.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse