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Growth Mechanism of Alternating Defect Domains in Hexagonal WS2 via Inhomogeneous W‐Precursor Accumulation

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Title
Growth Mechanism of Alternating Defect Domains in Hexagonal WS2 via Inhomogeneous W‐Precursor Accumulation
Author(s)
Gwang Hwi An; Seok Joon Yun; Young Hee Lee; Hyun Seok Lee
Subject
chemical vapor deposition, ; defect domains, ; desorption of precursor, ; hexagonal WS2, ; precursor accumulation
Publication Date
2020-10
Journal
SMALL, v.16, no.43, pp.2003326
Publisher
WILEY-V C H VERLAG GMBH
Abstract
© 2020 Wiley-VCH GmbH. While a hexagonal WS2 monolayer, grown by chemical vapor deposition, exhibits distinctive patterns in photoluminescence mapping, segmented with alternating S‐vacancy (SV) and W‐vacancy (WV) domains in a single crystal, the formation mechanism for native alternating defect domains remains unresolved to date. Here, the formation mechanism of alternating defect domains in hexagonal WS2 via the precursor accumulation model is experimentally elucidated. A triangular WS2 seed is initially formed, followed by a hexagonal flake. Alternating W‐rich (SV) and W‐deficient (WV) domains are constructed in hexagonal WS2 flake, which is confirmed by confocal photoluminescence mapping and secondary ion mass spectroscopy. This is explained by the accumulation or scarcity of W‐precursors at the edge of the WS2 flake. The W‐precursors accumulate near the edges of the initial triangular WS2 seed over time, while they are deficient near the corners of the triangular WS2, eventually forming WV domains in the truncated hexagonal domains. The heterogeneous accumulation becomes more prominent in the presence of H2 gas through desorption of the W‐precursors.
URI
https://pr.ibs.re.kr/handle/8788114/7604
DOI
10.1002/smll.202003326
ISSN
1613-6810
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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