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나노 구조 물리 연구단
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Temperature dependence of velocity saturation in a multilayer molybdenum disulfide transistor

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Title
Temperature dependence of velocity saturation in a multilayer molybdenum disulfide transistor
Author(s)
Byoung Hee Moon; Hyunjin Ji; Jung Jun Bae; Young Hee Lee
Publication Date
2020-03
Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.35, no.3, pp.035030 -
Publisher
IOP PUBLISHING LTD
Abstract
© 2020 IOP Publishing Ltd Velocity saturation in semiconducting devices is an important parameter that involves in the determination of the upper limit of the operational speed. The large contact resistance in two-dimensional semiconducting nano-devices is troublesome for extracting the saturation velocity from the electrical transport measurements, particularly at low temperatures. We obtain the saturation velocity for multilayer MoS2 from 10 to 300 K using the four-probe method to exclude contact effects. The saturation velocity exhibits strong temperature dependence, with a substantial enhancement at low temperature similar to the mobility, that is, similar to 5.2 x 10(5) cm s(-1) at 300 K and similar to 4.8 x 10(6) cm s(-1) at 10 K. The overall temperature dependence of the saturation velocity can be well represented using an empirical model previously used for Si
URI
https://pr.ibs.re.kr/handle/8788114/7213
ISSN
0268-1242
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
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