BROWSE

Related Scientist

cinap's photo.

cinap
나노구조물리연구단
more info

ITEM VIEW & DOWNLOAD

Temperature dependence of velocity saturation in a multilayer molybdenum disulfide transistor

DC Field Value Language
dc.contributor.authorByoung Hee Moon-
dc.contributor.authorHyunjin Ji-
dc.contributor.authorJung Jun Bae-
dc.contributor.authorYoung Hee Lee-
dc.date.available2020-10-14T08:14:00Z-
dc.date.created2020-06-29-
dc.date.issued2020-03-
dc.identifier.issn0268-1242-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/7213-
dc.description.abstract© 2020 IOP Publishing Ltd Velocity saturation in semiconducting devices is an important parameter that involves in the determination of the upper limit of the operational speed. The large contact resistance in two-dimensional semiconducting nano-devices is troublesome for extracting the saturation velocity from the electrical transport measurements, particularly at low temperatures. We obtain the saturation velocity for multilayer MoS2 from 10 to 300 K using the four-probe method to exclude contact effects. The saturation velocity exhibits strong temperature dependence, with a substantial enhancement at low temperature similar to the mobility, that is, similar to 5.2 x 10(5) cm s(-1) at 300 K and similar to 4.8 x 10(6) cm s(-1) at 10 K. The overall temperature dependence of the saturation velocity can be well represented using an empirical model previously used for Si-
dc.description.uri1-
dc.language영어-
dc.publisherIOP PUBLISHING LTD-
dc.subjectvelocity saturation-
dc.subjectmultilayer molybdenum disulfide-
dc.subjectfour-probe measurement-
dc.titleTemperature dependence of velocity saturation in a multilayer molybdenum disulfide transistor-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000537720200008-
dc.identifier.scopusid2-s2.0-85082644185-
dc.identifier.rimsid72575-
dc.contributor.affiliatedAuthorByoung Hee Moon-
dc.contributor.affiliatedAuthorYoung Hee Lee-
dc.identifier.doi10.1088/1361-6641/ab714a-
dc.identifier.bibliographicCitationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.35, no.3, pp.035030-
dc.citation.titleSEMICONDUCTOR SCIENCE AND TECHNOLOGY-
dc.citation.volume35-
dc.citation.number3-
dc.citation.startPage035030-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusMOS2 TRANSISTORS-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordAuthorvelocity saturation-
dc.subject.keywordAuthormultilayer molybdenum disulfide-
dc.subject.keywordAuthorfour-probe measurement-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
Files in This Item:
Temperature dependence_Semiconductor Science and Technology_Young Hee Lee.pdfDownload

qrcode

  • facebook

    twitter

  • Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
해당 아이템을 이메일로 공유하기 원하시면 인증을 거치시기 바랍니다.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse