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Bandgap engineering of two-dimensional semiconductor materials

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Title
Bandgap engineering of two-dimensional semiconductor materials
Author(s)
A. Chaves; J. G. Azadani; D. R. da Costa; R. Frisenda; A. J. Chaves; Seung Hyun Song; Y. D. Kim; Daowei He; Jiadong Zhou; A. Castellanos-Gomez; F. M. Peeters; Zheng Liu; C. L. Hinkle; Sang-Hyun Oh; Peide D. Ye; Steven J. Koester; Lee, Young Hee; Ph. Avouris; Xinran Wang; Tony Low; Hussain Alsalman
Subject
TRANSITION-METAL DICHALCOGENIDES, ; INDIRECT INTERLAYER EXCITONS, ; LARGE-AREA SYNTHESIS, ; FEW-LAYER, ; ELECTRONIC-STRUCTURE, ; 2D MATERIALS, ; HIGH-QUALITY, ; PHASE-TRANSITION, ; BLACK PHOSPHORUS, ; CARRIER MOBILITY
Publication Date
2020-08
Journal
npj 2D Materials and Applications, v.4, no.1
Publisher
NATURE PUBLISHING GROUP
Abstract
© 2020 Springer Nature Limited Semiconductors are the basis of many vital technologies such as electronics, computing, communications, optoelectronics, and sensing. Modern semiconductor technology can trace its origins to the invention of the point contact transistor in 1947. This demonstration paved the way for the development of discrete and integrated semiconductor devices and circuits that has helped to build a modern society where semiconductors are ubiquitous components of everyday life. A key property that determines the semiconductor electrical and optical properties is the bandgap. Beyond graphene, recently discovered two-dimensional (2D) materials possess semiconducting bandgaps ranging from the terahertz and mid-infrared in bilayer graphene and black phosphorus, visible in transition metal dichalcogenides, to the ultraviolet in hexagonal boron nitride. In particular, these 2D materials were demonstrated to exhibit highly tunable bandgaps, achieved via the control of layers number, heterostructuring, strain engineering, chemical doping, alloying, intercalation, substrate engineering, as well as an external electric field. We provide a review of the basic physical principles of these various techniques on the engineering of quasi-particle and optical bandgaps, their bandgap tunability, potentials and limitations in practical realization in future 2D device technologies.
URI
https://pr.ibs.re.kr/handle/8788114/7675
DOI
10.1038/s41699-020-00162-4
ISSN
2397-7132
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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