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나노 구조 물리 연구단
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Ferromagnetic Order at Room Temperature in Monolayer WSe2 Semiconductor via Vanadium Dopant

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Title
Ferromagnetic Order at Room Temperature in Monolayer WSe2 Semiconductor via Vanadium Dopant
Author(s)
Seok Joon Yun; Dinh Loc Duong; Doan Manh Ha; Kirandeep Singh; Thanh Luan Phan; Wooseon Choi; Young-Min Kim; Young Hee Lee
Publication Date
2020-05
Journal
ADVANCED SCIENCE, v.7, no.9, pp.1903076 -
Publisher
WILEY
Abstract
© 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Diluted magnetic semiconductors including Mn-doped GaAs are attractive for gate-controlled spintronics but Curie transition at room temperature with long-range ferromagnetic order is still debatable to date. Here, the room-temperature ferromagnetic domains with long-range order in semiconducting V-doped WSe2 monolayer synthesized by chemical vapor deposition are reported. Ferromagnetic order is manifested using magnetic force microscopy up to 360 K, while retaining high on/off current ratio of ≈105 at 0.1% V-doping concentration. The V-substitution to W sites keeps a V–V separation distance of 5 nm without V–V aggregation, scrutinized by high-resolution scanning transmission electron microscopy. More importantly, the ferromagnetic order is clearly modulated by applying a back-gate bias. The findings open new opportunities for using 2D transition metal dichalcogenides for future spintronics
URI
https://pr.ibs.re.kr/handle/8788114/7205
ISSN
2198-3844
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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