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Publication Date2021-04-21
Selective Pattern Growth of Atomically Thin MoSe2 Films via a Surface-Mediated Liquid-Phase Promoter
Won Tae Kang; Phan, Thanh Luan; Ahn, Kyung Jin, et al
ACS APPLIED MATERIALS & INTERFACES, v.13, no.15, pp.18056 - 18064
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Publication Date2021-03-22
Evidence of itinerant holes for long-range magnetic order in the tungsten diselenide semiconductor with vanadium dopants
Bumsub Song; Seok Joon Yun; Jinbao Jiang, et al
Physical Review B, v.103, no.9, pp.094432-1 - 094432-7
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Publication Date2021-03-14
Ideal PN photodiode using doping controlled WSe2-MoSe2lateral heterostructure
Kim, Ji Eun; Won Tae Kang; Tu Vu, Van, et al
Journal of Materials Chemistry C, v.9, no.10, pp.3504 - 3512
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Publication Date2021-03-10
Escalated Photocurrent with Excitation Energy in Dual-Gated MoTe2
Jun Suk Kim; Minh Dao Tran; Sung Tae Kim, et al
NANO LETTERS, v.21, no.5, pp.1976 - 1981
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Publication Date2021-03
Atomic-scale chemical mapping of copper dopants in Bi2Te2.7Se0.3 thermoelectric alloy
Y.-M. Kim; Lee, K.H.; Fu, L., et al
MATERIALS TODAY PHYSICS, v.17
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Publication Date2021-03
Color of Copper/Copper Oxide
Kim, Su Jae; Kim, Seonghoon; Lee, Jegon, et al
Advanced Materials, v.33, no.15
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Publication Date2021-03
Hot carrier photovoltaics in van der Waals heterostructures
Highly Cited Paper
Kamal Kumar Paul; Ji- Hee Kim; Young Hee Lee
NATURE REVIEWS PHYSICS, v.3, no.3, pp.178 - 192
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Publication Date2021-02-28
Band restructuring of ordered/disordered blue TiO2for visible light photocatalysis
Simgeon Oh; Ji-Hee Kim; Hee Min Hwang, et al
Journal of Materials Chemistry A, v.9, no.8, pp.4822 - 4830
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Publication Date2021-02-23
Identifying Defect-Induced Trion in Monolayer WS2 via Carrier Screening Engineering
Riya Sebait; Chandan Biswas; Bumsub Song, et al
ACS NANO, v.15, no.2, pp.2849 - 2857
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Publication Date2021-02-19
Real-space imaging of acoustic plasmons in large-area graphene grown by chemical vapor deposition
Menabde, Sergey G.; Lee, In-Ho; Sanghyub Lee, et al
NATURE COMMUNICATIONS, v.12, no.1
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Publication Date2021-02-01
Enhancement in optically induced ultrafast THz response of MoSe(2)MoS(2 )heterobilayer
KUMAR, SUNIL; SINGH, ARVIND; KUMAR, SANDEEP, et al
OPTICS EXPRESS, v.29, no.3, pp.4181 - 4190
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Publication Date2021-01-26
Probing giant Zeeman shift in vanadium-doped WSe2 via resonant magnetotunneling transport
Jinbao Jiang; Lan-Anh T. Nguyen; Tuan Dung Nguyen, et al
Physical Review B, v.103, no.1
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Publication Date2020-12
Modulation Doping via a Two-Dimensional Atomic Crystalline Acceptor
Yiping Wang; Jesse Balgley; Eli Gerber, et al
Nano Letters, v.20, no.12, pp.8446 - 8452
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Publication Date2020-12
Schottky-barrier quantum well in two-dimensional semiconductor nanotransistors
Jinbao Jiang; Manh-Ha Doan; Linfeng Sun, et al
MATERIALS TODAY PHYSICS, v.15, pp.100275
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Publication Date2020-12
Coulomb drag transistor using a graphene and MoS2 heterostructure
Youngjo Jin; Min-Kyu Joo; Byoung Hee Moon, et al
COMMUNICATIONS PHYSICS, v.3, no.1, pp.189
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Publication Date2020-11
Tuning the inhomogeneous charge transport in ZnO interfaces for ultrahigh on/off ratio top-gated field-effect-transistor arrays
Thanh Luan Phan; Dinh Loc Duong; Tuan Khanh Chau, et al
NANO RESEARCH, v.13, no.11, pp.3033 - 3040
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Publication Date2020-11
Li Intercalation Effects on Interface Resistances of High-Speed and Low-Power WSe(2)Field-Effect Transistors
Yong Seon Shin; Kiyoung Lee; Dinh Loc Duong, et al
ADVANCED FUNCTIONAL MATERIALS, v.30, no.45, pp.2003688
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Publication Date2020-11
Bandgap Renormalization in Monolayer MoS2 on CsPbBr3 Quantum Dots via Charge Transfer at Room Temperature
Subash Adhikari; Ji-Hee Kim; Bumsub Song, et al
ADVANCED MATERIALS INTERFACES, v.7, no.21, pp.2000835
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Publication Date2020-11
A non-volatile memory based on NbOx /NbSe2 van der Waals heterostructures
Ji Eun Kim; Van Tu Vu; Thi Thanh Huong Vu, et al
APPLIED SCIENCES, v.10, no.21, pp.7598
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Publication Date2020-10
Layer-controlled single-crystalline graphene film with stacking order via Cu-Si alloy formation
Van Luan Nguyen; Dinh Loc Duong; Sang Hyub Lee, et al
NATURE NANOTECHNOLOGY, v.15, no.10, pp.861 - 867