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Selective Pattern Growth of Atomically Thin MoSe2 Films via a Surface-Mediated Liquid-Phase Promoter

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Title
Selective Pattern Growth of Atomically Thin MoSe2 Films via a Surface-Mediated Liquid-Phase Promoter
Author(s)
Won Tae Kang; Phan, Thanh Luan; Ahn, Kyung Jin; Lee, Ilmin; Young Rae Kim; Won, Ui Yeon; Kim, Ji Eun; Young Hee Lee; Yu, Woo Jong
Subject
TRANSITION-METAL DICHALCOGENIDES, ; MONOLAYER MOS2, ; HETEROSTRUCTURES, ; HETEROJUNCTION, ; TRANSISTORS, ; PHOTOLUMINESCENCE, ; OPTOELECTRONICS, ; TRANSPARENT, ; GRAPHENE, ; BANDGAP
Publication Date
2021-04-21
Journal
ACS APPLIED MATERIALS & INTERFACES, v.13, no.15, pp.18056 - 18064
Publisher
AMER CHEMICAL SOC
Abstract
Two-dimensional transition metal dichalcogenides (TMDs) offer numerous advantages over silicon-based application in terms of atomically thin geometry, excellent opto-electrical properties, layer-number dependence, band gap variability, and lack of dangling bonds. The production of high-quality and large-scale TMD films is required with consideration of practical technology. However, the performance of scalable devices is affected by problems such as contamination and patterning arising from device processing; this is followed by an etching step, which normally damages the TMD film. Herein, we report the direct growth of MoSe2 films on selective pattern areas via a surface-mediated liquid-phase promoter using a solution-based approach. Our growth process utilizes the promoter on the selective pattern area by enhancing wettability, resulting in a highly uniform MoSe2 film. Moreover, our approach can produce other TMD films such as WSe2 films as well as control various pattern shapes, sizes, and large-scale areas, thus improving their applicability in various devices in the future. Our patterned MoSe2 field-effect transistor device exhibits a p-type dominant conduction behavior with a high on/off current ratio of similar to 10(6). Thus, our study provides general guidance for direct selective pattern growth via a solution-based approach and the future design of integrated devices for a large-scale application.
URI
https://pr.ibs.re.kr/handle/8788114/9755
DOI
10.1021/acsami.1c04005
ISSN
1944-8244
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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