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Selective Pattern Growth of Atomically Thin MoSe2 Films via a Surface-Mediated Liquid-Phase Promoter

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dc.contributor.authorWon Tae Kang-
dc.contributor.authorPhan, Thanh Luan-
dc.contributor.authorAhn, Kyung Jin-
dc.contributor.authorLee, Ilmin-
dc.contributor.authorYoung Rae Kim-
dc.contributor.authorWon, Ui Yeon-
dc.contributor.authorKim, Ji Eun-
dc.contributor.authorYoung Hee Lee-
dc.contributor.authorYu, Woo Jong-
dc.date.accessioned2021-06-11T01:30:07Z-
dc.date.accessioned2021-06-11T01:30:07Z-
dc.date.available2021-06-11T01:30:07Z-
dc.date.available2021-06-11T01:30:07Z-
dc.date.created2021-05-27-
dc.date.issued2021-04-21-
dc.identifier.issn1944-8244-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/9755-
dc.description.abstractTwo-dimensional transition metal dichalcogenides (TMDs) offer numerous advantages over silicon-based application in terms of atomically thin geometry, excellent opto-electrical properties, layer-number dependence, band gap variability, and lack of dangling bonds. The production of high-quality and large-scale TMD films is required with consideration of practical technology. However, the performance of scalable devices is affected by problems such as contamination and patterning arising from device processing; this is followed by an etching step, which normally damages the TMD film. Herein, we report the direct growth of MoSe2 films on selective pattern areas via a surface-mediated liquid-phase promoter using a solution-based approach. Our growth process utilizes the promoter on the selective pattern area by enhancing wettability, resulting in a highly uniform MoSe2 film. Moreover, our approach can produce other TMD films such as WSe2 films as well as control various pattern shapes, sizes, and large-scale areas, thus improving their applicability in various devices in the future. Our patterned MoSe2 field-effect transistor device exhibits a p-type dominant conduction behavior with a high on/off current ratio of similar to 10(6). Thus, our study provides general guidance for direct selective pattern growth via a solution-based approach and the future design of integrated devices for a large-scale application.-
dc.language영어-
dc.publisherAMER CHEMICAL SOC-
dc.titleSelective Pattern Growth of Atomically Thin MoSe2 Films via a Surface-Mediated Liquid-Phase Promoter-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000643578300088-
dc.identifier.scopusid2-s2.0-85104920263-
dc.identifier.rimsid75656-
dc.contributor.affiliatedAuthorWon Tae Kang-
dc.contributor.affiliatedAuthorYoung Rae Kim-
dc.contributor.affiliatedAuthorYoung Hee Lee-
dc.identifier.doi10.1021/acsami.1c04005-
dc.identifier.bibliographicCitationACS APPLIED MATERIALS & INTERFACES, v.13, no.15, pp.18056 - 18064-
dc.relation.isPartOfACS APPLIED MATERIALS & INTERFACES-
dc.citation.titleACS APPLIED MATERIALS & INTERFACES-
dc.citation.volume13-
dc.citation.number15-
dc.citation.startPage18056-
dc.citation.endPage18064-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusTRANSITION-METAL DICHALCOGENIDES-
dc.subject.keywordPlusMONOLAYER MOS2-
dc.subject.keywordPlusHETEROSTRUCTURES-
dc.subject.keywordPlusHETEROJUNCTION-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordPlusPHOTOLUMINESCENCE-
dc.subject.keywordPlusOPTOELECTRONICS-
dc.subject.keywordPlusTRANSPARENT-
dc.subject.keywordPlusGRAPHENE-
dc.subject.keywordPlusBANDGAP-
dc.subject.keywordAuthormolybdenum diselenide-
dc.subject.keywordAuthorpattern growth-
dc.subject.keywordAuthorpromoting solution coating-
dc.subject.keywordAuthorchemical vapor deposition-
dc.subject.keywordAuthortransition metal dichalcogenides-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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