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Ideal PN photodiode using doping controlled WSe2-MoSe2lateral heterostructure

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Title
Ideal PN photodiode using doping controlled WSe2-MoSe2lateral heterostructure
Author(s)
Kim, Ji Eun; Won Tae Kang; Tu Vu, Van; Young Rae Kim; Shin, Yong Seon; Lee, Ilmin; Won, Ui Yeon; Lee, Boo Heung; Kim, Kunnyun; Phan, Thanh Luan; Young Hee Lee; Yu, Woo Jong
Publication Date
2021-03
Journal
Journal of Materials Chemistry C, v.9, no.10, pp.3504 - 3512
Publisher
Royal Society of Chemistry
Abstract
© The Royal Society of Chemistry 2021.As the tight contact interface of the lateral PN junction enables high responsivity, specific detectivity, and fast response speed, atomic-scale two-dimensional (2D) lateral PN heterostructures are emerging as viable alternatives to silicon-based photodiodes. The optical properties of the current 2D heterostructures depend entirely on the intrinsic properties of 2D materials, which can be greatly improved by forming an ideal PN diodeviathe doping control of 2D heterostructures. In this study, we propose a high-performance photodiode using a doping-controlled WSe2-MoSe2PN heterojunction. During the synthesis, the low chemical reactivity of Nb2O5with WO3as compared to MoO3enables sequential growth and prevents niobium (Nb) doping during MoSe2growth at low temperatures. Conversely, in the WSe2growth at high temperatures, tungsten (W) to Nb is selectively substituted, resulting in the lateral heterostructure of Nb-doped WSe2-MoSe2. The Nb atoms in WSe2change the WSe2type from ambipolar to p-type dominant. Together with intrinsically n-type MoSe2, Nb-doped WSe2forms a lateral PN heterostructure with a near-unity ideality factor (1.3) and a high forward/reverse current ratio of 104. Our ideal 2D PN photodiode effectively suppresses the dark current in the reverse bias region (∼100 fA at an overallVDSof 0 V to approximately −10 V) and enhances the photocurrent by the high built-in potential at the PN depletion layer (VOC= 0.52 V). Thus, our device exhibits a highIlight/Idarkratio (105) and a corresponding ultra-high detectivity (5.78 × 1015Jones), which are approximately 100 times higher than those of reported lateral 2D PN heterostructure photodiodes. These outstanding performances show that the doping-controlled transition metal dichalcogenide PN heterostructures are promising candidates for next-generation optoelectronics.
URI
https://pr.ibs.re.kr/handle/8788114/9634
DOI
10.1039/d0tc05625a
ISSN
2050-7526
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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