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Coulomb drag transistor using a graphene and MoS2 heterostructure

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Title
Coulomb drag transistor using a graphene and MoS2 heterostructure
Author(s)
Youngjo Jin; Min-Kyu Joo; Byoung Hee Moon; Hyun Kim; Sanghyup Lee; Hye Yun Jeong; Young Hee Lee
Subject
MOBILITY, ; PHASE, ; FILM
Publication Date
2020-12
Journal
COMMUNICATIONS PHYSICS, v.3, no.1, pp.189
Publisher
NATURE PUBLISHING GROUP
Abstract
© 2020, The Author(s). Two-dimensional (2D) heterostructures often provide extraordinary carrier transport as exemplified by superconductivity or excitonic superfluidity. Recently, a double-layer graphene (Gr) separated by few-layered boron nitride demonstrated the Coulomb drag phenomenon: carriers in the active layer drag carriers in the passive layer. Here, we propose high-performance Gr/MoS2 heterostructure transistors operating via Coulomb drag, exhibiting a high carrier mobility (∼3700 cm2 V−1 s−1) and on/off-current ratio (∼108) at room temperature. The van der Waals gap at the Gr/MoS2 interface induces strong interactions between the interlayer carriers, whose recombination is suppressed by the Schottky barrier between p-Gr and n-MoS2, clearly distinct from the presence of insulating layers. The sign reversal of lateral voltage clearly demonstrates the Coulomb drag in carrier transport. Hole-like behavior of electrons in the n-MoS2 is observed in magnetic field, indicating strong Coulomb drag at low temperature. Our Coulomb drag transistor thus provides a shortcut for the practical application of 2D heterostructures
URI
https://pr.ibs.re.kr/handle/8788114/7517
DOI
10.1038/s42005-020-00461-8
ISSN
2399-3650
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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