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Enhancement in optically induced ultrafast THz response of MoSe(2)MoS(2 )heterobilayer

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Title
Enhancement in optically induced ultrafast THz response of MoSe(2)MoS(2 )heterobilayer
Author(s)
KUMAR, SUNIL; SINGH, ARVIND; KUMAR, SANDEEP; NIVEDAN, ANAND; TONDUSSON, MARC; DEGERT, JEROME; OBERLE, JEAN; SEOK JOON YUN; YOUNG HEE LEE; FREYSZ, ERIC
Publication Date
2021-02
Journal
OPTICS EXPRESS, v.29, no.3, pp.4181 - 4190
Publisher
OPTICAL SOC AMER
Abstract
THz conductivity of large area MoS2 and MoSe2 monolayers as well as their vertical heterostructure, MoSe2MoS2 is measured in the 0.3-5 THz frequency range. Compared to the monolayers, the ultrafast THz reflectivity of the MoSe2MoS2 heterobilayer is enhanced many folds when optically excited above the direct band gap energies of the constituting monolayers. The free carriers generated in the heterobilayer evolve with the characteristic times found in each of the two monolayers. Surprisingly, the same enhancement is recorded in the ultrafst THz reflectivity of the heterobilayer when excited below the MoS2 bandgap energy. A mechanism accounting for these observations is proposed. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
URI
https://pr.ibs.re.kr/handle/8788114/9510
DOI
10.1364/OE.412548
ISSN
1094-4087
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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