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Escalated Photocurrent with Excitation Energy in Dual-Gated MoTe2

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Title
Escalated Photocurrent with Excitation Energy in Dual-Gated MoTe2
Author(s)
Jun Suk Kim; Minh Dao Tran; Sung Tae Kim; Daehan Yoo; Sang-Hyun Oh; Ji-Hee Kim; Young Hee Lee
Publication Date
2021-03-10
Journal
NANO LETTERS, v.21, no.5, pp.1976 - 1981
Publisher
AMER CHEMICAL SOC
Abstract
Although van der Waals-layered transition metal dichalcogenides from transient absorption spectroscopy have successfully demonstrated an ideal carrier multiplication (CM) performance with an onset of nearly 2E(g), interpretation of the CM effect from the optical approach remains unresolved owing to the complexity of many-body electron-hole pairs. We demonstrate the escalated photocurrent with excitation photon energy by fabricating the dual-gate p-n junction of a MoTe2 film on a transparent substrate. Electrons and holes were efficiently extracted by eliminating the Schottky barriers in the metal contact and minimizing multiple reflections. The photocurrent was elevated proportionately to the excitation photon energy. The boosted quantum efficiency confirms the multiple electron-hole pair generation of >2E(g), consistent with CM results from an optical approach, pushing the solar cell efficiency beyond the Shockley-Queisser limit.
URI
https://pr.ibs.re.kr/handle/8788114/9482
DOI
10.1021/acs.nanolett.0c04410
ISSN
1530-6984
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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