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Li Intercalation Effects on Interface Resistances of High-Speed and Low-Power WSe(2)Field-Effect Transistors

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Title
Li Intercalation Effects on Interface Resistances of High-Speed and Low-Power WSe(2)Field-Effect Transistors
Author(s)
Yong Seon Shin; Kiyoung Lee; Dinh Loc Duong; Jun Seok Kim; Won Tae Kang; Ji Eun Kim; Ui Yeon Won; Ilmin Lee; Hyangsook Lee; Jinseong Heo; Young Hee Lee; Woo Jong Yu
Subject
field-effect transistors, ; interface resistances, ; Li intercalation, ; schottky barriers, ; WSe2
Publication Date
2020-11
Journal
ADVANCED FUNCTIONAL MATERIALS, v.30, no.45, pp.2003688
Publisher
WILEY-V C H VERLAG GMBH
Abstract
Copyright © 1999-2020 John Wiley & Sons, Inc. All rights reserved Van der Waals (vdW) layered materials are promising channel materials for next-generation field-effect transistors (FETs). However, in vdW layered-material FETs, the Schottky barrier and tunnel barrier at the vdW interfaces significantly reduce the electron injection efficiencies at electrical contacts, thereby limiting the development of high-speed and low-power FETs. This study demonstrates that intercalated lithium (Li) ions at vdW interfaces lower the Schottky and tunnel barriers at the electrical contacts of multilayer tungsten diselenide FETs owing to the low potential energy of Li and the mild electron doping from intercalation, thus decreasing the resistance at the vdW interfaces and enhancing the current flow and field-effect mobility. Compared with before-Li intercalation, the multilayer WSe(2)planar FET demonstrates approximate to 1000 times higher current (I-DS= 17.8 mu A) atV(GS)= 50 V, approximate to 110 times higher maximum field-effect mobility (mu(FE)= 97.67 cm(2)V(-1)s(-1)), and approximate to 1000 times higher on/off current ratio (on/off ratio = approximate to 10(7)). Furthermore, in multilayer WSe(2)vertical FETs with vdW heterostructures having a structural strength of approximately the same as the current density, the intercalated Li ions at the graphene/WSe(2)vdW interfaces additionally improves the current density and the vertical mobility by approximate to 20 times (1.00 A cm(-2)) and 10 times (2.52 x 10(-4)cm(2)V(-1)s(-1)), respectively. This study establishes a method to reduce the resistance at vdW interfaces for developing high-speed and low-power multilayer vdW material FETs
URI
https://pr.ibs.re.kr/handle/8788114/7568
DOI
10.1002/adfm.202003688
ISSN
1616-301X
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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