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Tuning the inhomogeneous charge transport in ZnO interfaces for ultrahigh on/off ratio top-gated field-effect-transistor arrays

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Title
Tuning the inhomogeneous charge transport in ZnO interfaces for ultrahigh on/off ratio top-gated field-effect-transistor arrays
Author(s)
Thanh Luan Phan; Dinh Loc Duong; Tuan Khanh Chau; Sidi Fan; Won Tae Kang; Thi Suong Le; Hyun Yong Song; Linfeng Sun; Van Tu Vu; Min Ji Lee; Quoc An Vu; Young Hee Lee; Woo Jong Yu
Subject
zinc oxides, ; thin-film field-effect-transistor, ; self-assembly molecule, ; inhomogeneous charge transport, ; interface engineering
Publication Date
2020-11
Journal
NANO RESEARCH, v.13, no.11, pp.3033 - 3040
Publisher
TSINGHUA UNIV PRESS
Abstract
ⓒ Tsinghua University Press The interface between oxide/oxide layers shows an inhomogeneous charge transport behavior, which reveals a high conductivity owing to interface-doped. One typical example is the hetero-interface between ZnO film and other wide band gap oxides (e.g., Al2O3, TiO2, and HfO2). It is thus quite evident that the ZnO/other oxides hetero-interface contains high density electron carriers effectively screening the gate-induced electric field. Thus, an extremely weak gate modulation in ZnO film was showed, resulting in very low on/off ratio of 1.69 in top-gate field-effect-transistor (TG-FET) configuration. So, to extend the usage of ZnO TG-FET is not quite possible toward further practical application. Herein, we clarified the correlation of inhomogeneous region in oxide/oxide hetero-junction by systematically study. Our work suggests that a self-assembly of molecules (SAM) buffer layer is suitable for tuning the inhomogeneous charge transport in ZnO film, which not only reduces the interface trap density, but also effectively enhances the gate electric field modulation at the hetero-interface. We further report the robust fabrication of TG-FET arrays based on ZnO thin film, using an ultra-thin alkylphosphonic acid molecule monolayer as buffer layer. Our device demonstrates a pronounced ultrahigh on/off ratio of >= 10(8), which is 8-order of magnitude higher than that of a device without buffer layer. For the highly reliable arrays, our device exhibits a high yield of over 93% with an average on/off ratio of similar to 10(7)across the entire wafer scale, mobility (18.5 cm(2)/(V center dot s)), an extended bias-stressing (similar to 2,000 s) and long-stability (similar to 150 days) under ambient conditions
URI
https://pr.ibs.re.kr/handle/8788114/7570
DOI
10.1007/s12274-020-2968-5
ISSN
1998-0124
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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