Browsing by Author : Hyunjin Ji

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Showing results 1 to 10 of 10

Publication DateTitleAuthor(s)
2019-01Coulomb scattering mechanism transition in 2D layered MoTe2: effect of high-kappa passivation and Schottky barrier heightMin-Kyu Joo; Yoojoo Yun; Hyunjin Ji, et al
2019-03Defect-Affected Photocurrent in MoTe 2 FETsMohan Kumar Ghimire; Hyunjin Ji; Hamza Zad Gul, et al
2016-09Electron Excess Doping and Effective Schottky Barrier Reduction on the MoS2/h-BN HeterostructureMin-Kyu Joo; Byoung Hee Moon; Hyunjin Ji, et al
2018-06Gas adsorbates are Coulomb scatterers, rather than neutral ones, in a monolayer MoS2 field effect transistorHyunjin Ji; Hojoon Yi; Jinbong Seok, et al
2019-10Impact of Heat Treatment on a Hetero-Stacked MoS2/h-BN Field-Effect TransistorHyunjin Ji; Hojoon Yi; Huong Thi Thanh Nguyen, et al
2019-08Reduced interfacial fluctuation leading enhanced mobility in a monolayer MoS2 DG FET under low vertical electric fieldHyunjin Ji; Hojoon Yi; Sakong Wonkil, et al
2019-05Semimetallic Graphene for Infrared SensingHamza Zad Gul; Wonkil Sakong; Hyunjin Ji, et al
2019-08Temperature-Dependent Opacity of the Gate Field Inside MoS2 Field-Effect TransistorsHyunjin Ji; Mohan Kumar Ghimire; Gwanmu Lee, et al
2017-08Tunable Mobility in Double-Gated MoTe2 Field-Effect Transistor: Effect of Coulomb Screening and Trap SitesHyunjin Ji; Min-Kyu Joo; Hojoon Yi, et al
2017-02Understanding Coulomb Scattering Mechanism in Monolayer MoS2 Channel in the Presence of h-BN Buffer LayerMin-Kyu Joo; Byoung Hee Moon; Hyunjin Ji, et al
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