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Browsing byAuthor : hyunjinji
Showing results 1 to 10 of 10
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Publication Date2019-01
Coulomb scattering mechanism transition in 2D layered MoTe2: effect of high-kappa passivation and Schottky barrier height
NANOTECHNOLOGY, v.30, no.3, pp.035206
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Publication Date2016-09
Electron Excess Doping and Effective Schottky Barrier Reduction on the MoS2/h-BN Heterostructure
NANO LETTERS, v.16, no.10, pp.6383 - 6389
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Publication Date2018-06
Gas adsorbates are Coulomb scatterers, rather than neutral ones, in a monolayer MoS2 field effect transistor
NANOSCALE, v.10, no.23, pp.10856 - 10862
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Publication Date2019-10
Impact of Heat Treatment on a Hetero-Stacked MoS2/h-BN Field-Effect Transistor
IEEE ELECTRON DEVICE LETTERS, v.40, no.10, pp.1626 - 1629
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Publication Date2019-08
Reduced interfacial fluctuation leading enhanced mobility in a monolayer MoS2 DG FET under low vertical electric field
NANOTECHNOLOGY, v.30, no.34, pp.345206
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Publication Date2019-05
Semimetallic Graphene for Infrared Sensing
ACS APPLIED MATERIALS & INTERFACES, v.11, no.21, pp.19565 - 19571
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Publication Date2020-03
Temperature dependence of velocity saturation in a multilayer molybdenum disulfide transistor
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.35, no.3, pp.035030
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Publication Date2019-08
Temperature-Dependent Opacity of the Gate Field Inside MoS2 Field-Effect Transistors
ACS APPLIED MATERIALS & INTERFACES, v.11, no.32, pp.29022 - 29028
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Publication Date2017-08
Tunable Mobility in Double-Gated MoTe2 Field-Effect Transistor: Effect of Coulomb Screening and Trap Sites
ACS APPLIED MATERIALS & INTERFACES, v.9, no.34, pp.29185 - 29192
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Publication Date2017-02
Understanding Coulomb Scattering Mechanism in Monolayer MoS2 Channel in the Presence of h-BN Buffer Layer
ACS APPLIED MATERIALS & INTERFACES, v.9, no.5, pp.5006 - 5013
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