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나노 구조 물리 연구단
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Temperature-Dependent Opacity of the Gate Field Inside MoS2 Field-Effect Transistors

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Title
Temperature-Dependent Opacity of the Gate Field Inside MoS2 Field-Effect Transistors
Author(s)
Hyunjin Ji; Mohan Kumar Ghimire; Gwanmu Lee; Hojoon Yi; Wonkil Sakong; Seong Chu Lim; Yoojoo Yun; Jinbao Jiang; Joonggyu Kim; Min-Kyu Joo; Dongseok Suh; Hamza Zad Gul
Publication Date
2019-08
Journal
ACS APPLIED MATERIALS & INTERFACES, v.11, no.32, pp.29022 - 29028
Publisher
AMER CHEMICAL SOC
Abstract
© 2019 American Chemical Society.The transport behaviors of MoS2 field-effect transistors (FETs) with various channel thicknesses are studied. In a 12 nm thick MoS2 FET, a typical switching behavior is observed with an Ion/Ioff ratio of 106. However, in 70 nm thick MoS2 FETs, the gating effect weakens with a large off-current, resulting from the screening of the gate field by the carriers formed through the ionization of S vacancies at 300 K. Hence, when the latter is dual-gated, two independent conductions develop with different threshold voltage (VTH) and field-effect mobility (μFE) values. When the temperature is lowered for the latter, both the ionization of S vacancies and the gate-field screening reduce, which revives the strong Ion/Ioff ratio and merges the two separate channels into one. Thus, only one each of VTH and μFE are seen from the thick MoS2 FET when the temperature is less than 80 K. The change of the number of conduction channels is attributed to the ionization of S vacancies, which leads to a temperature-dependent intra- and interlayer conductance and the attenuation of the electrostatic gate field. The defect-related transport behavior of thick MoS2 enables us to propose a new device structure that can be further developed to a vertical inverter inside a single MoS2 flake
URI
https://pr.ibs.re.kr/handle/8788114/6615
ISSN
1944-8244
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
Temperature-Dependent_ACS Applied Materials and Interfaces_Seong Chu Lim.pdfDownload

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