BROWSE

Related Scientist

Researcher

나노 구조 물리 연구단
나노구조물리 연구단
more info

Electron Excess Doping and Effective Schottky Barrier Reduction on the MoS2/h-BN Heterostructure

Cited 18 time in webofscience Cited 0 time in scopus
400 Viewed 18 Downloaded
Title
Electron Excess Doping and Effective Schottky Barrier Reduction on the MoS2/h-BN Heterostructure
Author(s)
Min-Kyu Joo; Byoung Hee Moon; Hyunjin Ji; Gang Hee Han; Hyun Kim; Gwanmu Lee; Seong Chu Lim; Dongseok Suh; Young Hee Lee
Publication Date
2016-09
Journal
NANO LETTERS, v.16, no.10, pp.6383 - 6389
Publisher
AMER CHEMICAL SOC
Abstract
Layered hexagonal boron nitride (h-BN) thin film is a dielectric that surpasses carrier mobility by reducing charge scattering with silicon oxide in diverse electronics formed with graphene and transition metal dichalcogenides. However, the h-BN effect on electron doping concentration and Schottky barrier is little known. Here, we report that use of h-BN thin film as a substrate for monolayer MoS2 can induce ∼6.5 × 1011 cm−2 electron doping at room temperature which was determined using theoretical flat band model and interface trap density. The saturated excess electron concentration of MoS2 on h-BN was found to be ∼5 × 1013 cm−2 at high temperature and was significantly reduced at low temperature. © 2016 American Chemical Society Further, the inserted h-BN enables us to reduce the Coulombic charge scattering in MoS2/h-BN and lower the effective Schottky barrier height by a factor of 3, which gives rise to four times enhanced the field-effect carrier mobility and an emergence of metal−insulator transition at a much lower charge density of ∼1.0 × 1012 cm−2 (T = 25 K). The reduced effective Schottky barrier height in MoS2/h-BN is attributed to the decreased effective work function of MoS2 arisen from h-BN induced n-doping and the reduced effective metal work function due to dipole moments originated from fixed charges in SiO2. © 2016 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/2864
ISSN
1530-6984
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
Electron Excess.pdfDownload

qrcode

  • facebook

    twitter

  • Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
해당 아이템을 이메일로 공유하기 원하시면 인증을 거치시기 바랍니다.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse