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Electron Excess Doping and Effective Schottky Barrier Reduction on the MoS2/h-BN Heterostructure

DC Field Value Language
dc.contributor.authorMin-Kyu Joo-
dc.contributor.authorByoung Hee Moon-
dc.contributor.authorHyunjin Ji-
dc.contributor.authorGang Hee Han-
dc.contributor.authorHyun Kim-
dc.contributor.authorGwanmu Lee-
dc.contributor.authorSeong Chu Lim-
dc.contributor.authorDongseok Suh-
dc.contributor.authorYoung Hee Lee-
dc.date.available2016-10-26T06:57:59Z-
dc.date.created2016-10-20-
dc.date.issued2016-09-
dc.identifier.issn1530-6984-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/2864-
dc.description.abstractLayered hexagonal boron nitride (h-BN) thin film is a dielectric that surpasses carrier mobility by reducing charge scattering with silicon oxide in diverse electronics formed with graphene and transition metal dichalcogenides. However, the h-BN effect on electron doping concentration and Schottky barrier is little known. Here, we report that use of h-BN thin film as a substrate for monolayer MoS2 can induce ∼6.5 × 1011 cm−2 electron doping at room temperature which was determined using theoretical flat band model and interface trap density. The saturated excess electron concentration of MoS2 on h-BN was found to be ∼5 × 1013 cm−2 at high temperature and was significantly reduced at low temperature. © 2016 American Chemical Society Further, the inserted h-BN enables us to reduce the Coulombic charge scattering in MoS2/h-BN and lower the effective Schottky barrier height by a factor of 3, which gives rise to four times enhanced the field-effect carrier mobility and an emergence of metal−insulator transition at a much lower charge density of ∼1.0 × 1012 cm−2 (T = 25 K). The reduced effective Schottky barrier height in MoS2/h-BN is attributed to the decreased effective work function of MoS2 arisen from h-BN induced n-doping and the reduced effective metal work function due to dipole moments originated from fixed charges in SiO2. © 2016 American Chemical Society-
dc.description.uri1-
dc.language영어-
dc.publisherAMER CHEMICAL SOC-
dc.subjectMoS2, h-BN, substrate doping, interface trap density, Coulomb scattering, Schottky barrier height, dipole alignment-
dc.titleElectron Excess Doping and Effective Schottky Barrier Reduction on the MoS2/h-BN Heterostructure-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000385469800057-
dc.identifier.scopusid2-s2.0-84991376274-
dc.identifier.rimsid57528ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorMin-Kyu Joo-
dc.contributor.affiliatedAuthorByoung Hee Moon-
dc.contributor.affiliatedAuthorGang Hee Han-
dc.contributor.affiliatedAuthorHyun Kim-
dc.contributor.affiliatedAuthorGwanmu Lee-
dc.contributor.affiliatedAuthorSeong Chu Lim-
dc.contributor.affiliatedAuthorDongseok Suh-
dc.contributor.affiliatedAuthorYoung Hee Lee-
dc.identifier.doi10.1021/acs.nanolett.6b02788-
dc.identifier.bibliographicCitationNANO LETTERS, v.16, no.10, pp.6383 - 6389-
dc.citation.titleNANO LETTERS-
dc.citation.volume16-
dc.citation.number10-
dc.citation.startPage6383-
dc.citation.endPage6389-
dc.date.scptcdate2018-10-01-
dc.description.wostc18-
dc.description.scptc22-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusMETAL-INSULATOR-TRANSITION-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusSINGLE-LAYER MOS2-
dc.subject.keywordPlusMOLYBDENUM-DISULFIDE-
dc.subject.keywordPlusMONOLAYER MOS2-
dc.subject.keywordPlusTRANSPORT-PROPERTIES-
dc.subject.keywordPlusGRAPHENE-
dc.subject.keywordPlusMOBILITY-
dc.subject.keywordPlusPHOTOLUMINESCENCE-
dc.subject.keywordPlusSUBSTRATE-
dc.subject.keywordAuthorMoS2-
dc.subject.keywordAuthorh-BN-
dc.subject.keywordAuthorsubstrate doping interface trap density-
dc.subject.keywordAuthorCoulomb scattering-
dc.subject.keywordAuthorSchottky barrier height-
dc.subject.keywordAuthordipole alignment-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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