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Robust Excitonic-Insulating States in Cu-Substituted Ta2NiSe5

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Title
Robust Excitonic-Insulating States in Cu-Substituted Ta2NiSe5
Author(s)
Junseong Song; Jung, Eilho; Byeong Wook Cho; Bumsub Song; Jae Woo Kim; Hyeonbeom Kim; Ki Kang Kim; Son, Byoungchul; Lee, Jouhahn; Hwang, Jungseek; Young Hee Lee
Publication Date
2023-04
Journal
ADVANCED MATERIALS INTERFACES, v.10, no.12
Publisher
WILEY
Abstract
© 2023 The Authors. Advanced Materials Interfaces published by Wiley-VCH GmbH. Excitonic insulators exhibit intriguing quantum phases that further attract numerous interests in engineering the electrical and optical properties of Ta2NiSe5. However, tuning the electronic properties such as spin-orbit coupling strength and orbital repulsion via pressure in Ta2NiSe5 are always accompanied with electron-hole pair breaking, which is a bottleneck for further applications. Here, the robust excitonic-insulating states invariant with electron-doping concentrations in Ta2NiSe5 are demonstrated. The electron doping is conducted by substituting Cu into Ni site (Ta2Ni1-xCuxSe5). The majority carrier of pristine sample is a hole-type and is converted to electron-type with a doping concentration over x = 0.01, whose carrier density can be controlled by varying the Cu concentration. The excitonic transition temperature (T-c) does not significantly alter with electron-doping concentrations, which is stark contrast with the declining T-c as the hole-type dopant of Fe or Co increases. The optical conductivity data also demonstrate the invariant excitonic-insulating states in Cu-doped Ta2NiSe5. The findings of invariant excitonic-insulating states in n-type Cu-substituted Ta2NiSe5 can be utilized for further electronic device applications by using excitons.
URI
https://pr.ibs.re.kr/handle/8788114/13295
DOI
10.1002/admi.202300010
ISSN
2196-7350
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
Center for Soft and Living Matter(첨단연성물질 연구단) > 1. Journal Papers (저널논문)
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