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Gate-Tunable Magnetism via Resonant Se-Vacancy Levels in WSe2

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Title
Gate-Tunable Magnetism via Resonant Se-Vacancy Levels in WSe2
Author(s)
Tuan Dung Nguyen; Jinbao Jiang; Bumsub Song; Minh Dao Tran; Choi, Wooseon; Ji Hee Kim; Young-Min Kim; Dinh Loc Duong; Young Hee Lee
Publication Date
2021-12
Journal
Advanced Science, v.8, no.24
Publisher
John Wiley and Sons Inc
Abstract
© 2021 The Authors. Advanced Science published by Wiley-VCH GmbHThe confined defects in 2D van der Waals (vdW)-layered semiconductors can be easily tailored using charge doping, strain, or an electric field. Nevertheless, gate-tunable magnetic order via intrinsic defects has been rarely observed to date. Herein, a gate-tunable magnetic order via resonant Se vacancies in WSe2 is demonstrated. The Se-vacancy states are probed via photocurrent measurements with gating to convert unoccupied states to partially occupied states associated with photo-excited carrier recombination. The magneto-photoresistance hysteresis is modulated by gating, which is consistent with the density functional calculations. The two energy levels associated with Se vacancies split with increasing laser power, owing to the robust Coulomb interaction and strong spin–orbit coupling. The findings offer a new approach for controlling the magnetic properties of defects in optoelectronic and spintronic devices using vdW-layered semiconductors.
URI
https://pr.ibs.re.kr/handle/8788114/10952
DOI
10.1002/advs.202102911
ISSN
2198-3844
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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