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Gate-Tunable Magnetism via Resonant Se-Vacancy Levels in WSe2

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dc.contributor.authorTuan Dung Nguyen-
dc.contributor.authorJinbao Jiang-
dc.contributor.authorBumsub Song-
dc.contributor.authorMinh Dao Tran-
dc.contributor.authorChoi, Wooseon-
dc.contributor.authorJi Hee Kim-
dc.contributor.authorYoung-Min Kim-
dc.contributor.authorDinh Loc Duong-
dc.contributor.authorYoung Hee Lee-
dc.date.accessioned2022-01-03T07:30:15Z-
dc.date.available2022-01-03T07:30:15Z-
dc.date.created2021-11-08-
dc.date.issued2021-12-
dc.identifier.issn2198-3844-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/10952-
dc.description.abstract© 2021 The Authors. Advanced Science published by Wiley-VCH GmbHThe confined defects in 2D van der Waals (vdW)-layered semiconductors can be easily tailored using charge doping, strain, or an electric field. Nevertheless, gate-tunable magnetic order via intrinsic defects has been rarely observed to date. Herein, a gate-tunable magnetic order via resonant Se vacancies in WSe2 is demonstrated. The Se-vacancy states are probed via photocurrent measurements with gating to convert unoccupied states to partially occupied states associated with photo-excited carrier recombination. The magneto-photoresistance hysteresis is modulated by gating, which is consistent with the density functional calculations. The two energy levels associated with Se vacancies split with increasing laser power, owing to the robust Coulomb interaction and strong spin–orbit coupling. The findings offer a new approach for controlling the magnetic properties of defects in optoelectronic and spintronic devices using vdW-layered semiconductors.-
dc.language영어-
dc.publisherJohn Wiley and Sons Inc-
dc.titleGate-Tunable Magnetism via Resonant Se-Vacancy Levels in WSe2-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000712096800001-
dc.identifier.scopusid2-s2.0-85117939987-
dc.identifier.rimsid76687-
dc.contributor.affiliatedAuthorTuan Dung Nguyen-
dc.contributor.affiliatedAuthorJinbao Jiang-
dc.contributor.affiliatedAuthorBumsub Song-
dc.contributor.affiliatedAuthorMinh Dao Tran-
dc.contributor.affiliatedAuthorJi Hee Kim-
dc.contributor.affiliatedAuthorYoung-Min Kim-
dc.contributor.affiliatedAuthorDinh Loc Duong-
dc.contributor.affiliatedAuthorYoung Hee Lee-
dc.identifier.doi10.1002/advs.202102911-
dc.identifier.bibliographicCitationAdvanced Science, v.8, no.24-
dc.relation.isPartOfAdvanced Science-
dc.citation.titleAdvanced Science-
dc.citation.volume8-
dc.citation.number24-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusQUANTUM LIGHT-
dc.subject.keywordPlusEMITTERS-
dc.subject.keywordPlusFERROMAGNETISM-
dc.subject.keywordAuthormagnetism-
dc.subject.keywordAuthorSe-vacancy-
dc.subject.keywordAuthorspintronics-
dc.subject.keywordAuthortwo-dimensional materials-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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