-
Publication Date2021-12
Anomalous Dimensionality-Driven Phase Transition of MoTe2 in Van der Waals Heterostructure
Huije Ryu; Yangjin Lee; Hyun-Jung Kim, et al
Advanced Functional Materials, v.31, no.51
-
Publication Date2013-04
Effect of surface morphology on friction of graphene on various substrates
Dae-Hyun Cho; Lei Wang; Jin-Seon Kim, et al
NANOSCALE, v.5, no.7, pp.3063 - 3069
-
Publication Date2021-07
Evolution of defect formation during atomically precise desulfurization of monolayer MoS2
Jong-Young Lee; Jong Hun Kim; Yeonjoon Jung, et al
Communications Materials, v.2, no.1
-
Publication Date2019-11
Ferroelectric-Polymer-Enabled Contactless Electric Power Generation in Triboelectric Nanogenerators
Hyun Soo Kim; Dong Yeong Kim; Jae-Eun Kim, et al
ADVANCED FUNCTIONAL MATERIALS, v.29, no.45, pp.1905816
-
Publication Date2016-11
Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2 Heterostructure for Ambipolar Field-Effect Transistors
Inyeal Lee; Servin Rathi; Dongsuk Lim, et al
ADVANCED MATERIALS, v.28, no.43, pp.9519 - 9525
-
Publication Date2021-01
Hydrogenated Graphene Improves Neuronal Network Maturation and Excitatory Transmission
Matteo Moschetta; Jong-Young Lee; João Rodrigues, et al
Advanced biology, v.5, no.1
-
Publication Date2023-04
Laser-Induced Phase Transition and Patterning of hBN-Encapsulated Mo Te-2
Huije Ryu; Yunah Lee; Jae Hwan Jeong, et al
SMALL, v.19, no.17
-
Publication Date2024-03
Optical grade transformation of monolayer transition metal dichalcogenides via encapsulation annealing
Huije Ryu; Seong Chul Hong; Kangwon Kim, et al
Nanoscale, v.16, no.11, pp.5836 - 5844
-
Publication Date2021-05-25
Single-Crystalline Metallic Films Induced by van der Waals Epitaxy on Black Phosphorus
Yangjin Lee; Han-gyu Kim; Tae Keun Yun, et al
Chemistry of Materials, v.33, no.10, pp.3593 - 3601
-
Publication Date2022-06
STEM Image Analysis Based on Deep Learning: Identification of Vacancy Defects and Polymorphs of MoS2
Kihyun Lee; Jinsub Park; Soyeon Choi, et al
Nano letters, v.22, no.12, pp.4677 - 4685