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나노 구조 물리 연구단
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Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2 Heterostructure for Ambipolar Field-Effect Transistors

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Title
Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2 Heterostructure for Ambipolar Field-Effect Transistors
Author(s)
Inyeal Lee; Servin Rathi; Dongsuk Lim; Lijun Li; Jinwoo Park; Yoontae Lee; Kyung Soo Yi; Krishna P. Dhakal; Jeongyong Kim; Changgu Lee; Gwan-Hyoung Lee; Young Duck Kim; James Hone; Sun Jin Yun; Doo-Hyeb Youn; Gil-Ho Kim
Publication Date
2016-11
Journal
ADVANCED MATERIALS, v.28, no.43, pp.9519 - 9525
Publisher
WILEY-V C H VERLAG GMBH
Abstract
An ambipolar dual-channel field-effect transistor (FET) with a WSe2/MoS2 heterostructure formed by separately controlled individual channel layers is demonstrated. The FET shows a switchable ambipolar behavior with independent carrier transport of electrons and holes in the individual layers of MoS2 and WSe2, respectively. Moreover, the photo-response is studied at the heterointerface of the WSe2/MoS2 dual-channel FET © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
URI
https://pr.ibs.re.kr/handle/8788114/4464
ISSN
0935-9648
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
Gate‐Tunable_Jeongyong Kim_Advanced_Materials.pdfDownload

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