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IBS Publications RepositoryCenter for Integrated Nanostructure Physics(나노구조물리 연구단)1. Journal Papers (저널논문)

Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2 Heterostructure for Ambipolar Field-Effect Transistors

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dc.contributor.authorInyeal Lee-
dc.contributor.authorServin Rathi-
dc.contributor.authorDongsuk Lim-
dc.contributor.authorLijun Li-
dc.contributor.authorJinwoo Park-
dc.contributor.authorYoontae Lee-
dc.contributor.authorKyung Soo Yi-
dc.contributor.authorKrishna P. Dhakal-
dc.contributor.authorJeongyong Kim-
dc.contributor.authorChanggu Lee-
dc.contributor.authorGwan-Hyoung Lee-
dc.contributor.authorYoung Duck Kim-
dc.contributor.authorJames Hone-
dc.contributor.authorSun Jin Yun-
dc.contributor.authorDoo-Hyeb Youn-
dc.contributor.authorGil-Ho Kim-
dc.date.available2018-04-27T06:31:31Z-
dc.date.created2018-03-16-
dc.date.issued2016-11-
dc.identifier.issn0935-9648-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/4464-
dc.description.abstractAn ambipolar dual-channel field-effect transistor (FET) with a WSe2/MoS2 heterostructure formed by separately controlled individual channel layers is demonstrated. The FET shows a switchable ambipolar behavior with independent carrier transport of electrons and holes in the individual layers of MoS2 and WSe2, respectively. Moreover, the photo-response is studied at the heterointerface of the WSe2/MoS2 dual-channel FET © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim-
dc.language영어-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.titleGate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2 Heterostructure for Ambipolar Field-Effect Transistors-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000391175000009-
dc.identifier.scopusid2-s2.0-84987677230-
dc.identifier.rimsid62488ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorKrishna P. Dhakal-
dc.contributor.affiliatedAuthorJeongyong Kim-
dc.identifier.doi10.1002/adma.201601949-
dc.identifier.bibliographicCitationADVANCED MATERIALS, v.28, no.43, pp.9519 - 9525-
dc.relation.isPartOfADVANCED MATERIALS-
dc.citation.titleADVANCED MATERIALS-
dc.citation.volume28-
dc.citation.number43-
dc.citation.startPage9519-
dc.citation.endPage9525-
dc.date.scptcdate2018-10-01-
dc.description.wostc8-
dc.description.scptc9-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusDER-WAALS HETEROSTRUCTURES-
dc.subject.keywordPlusLAYER GRAPHENE-
dc.subject.keywordPlusMONOLAYER MOS2-
dc.subject.keywordPlusGAIN-
dc.subject.keywordPlusMONO-
dc.subject.keywordPlusWS2-
dc.subject.keywordAuthordual-channel-
dc.subject.keywordAuthorheterostructures-
dc.subject.keywordAuthorMoS2-
dc.subject.keywordAuthorphotoresponse-
dc.subject.keywordAuthorWSe2-
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Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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