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Barrier Height at the Graphene and Carbon Nanotube Junction

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Title
Barrier Height at the Graphene and Carbon Nanotube Junction
Author(s)
Tae Geun Kim; Un Jeong Kim; Si Young Lee; Young Hee Lee; Yun Seop Yu; Sung Woo Hwang; Sangsig Kim
Publication Date
2014-06
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.6, pp.2203 - 2207
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Abstract
Abstract—Graphene/carbon nanotube (CNT) junction barrier height was investigated using all-carbon field-effect transistor structure with graphene and single-walled CNT (SWCNT) network as source (S)/drain (D)/gate electrodes and as channel, respectively. SWCNT network channel was formed by dielectricphoresis process at the prepatterned graphene S/D electrodes. By analyzing the measured current–voltage characteristics by the diode circuit model, the Schottky barrier height at the graphene and CNT junction was found to be approximately 0.5 eV.
URI
https://pr.ibs.re.kr/handle/8788114/998
DOI
10.1109/TED.2014.2317799
ISSN
0018-9383
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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