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IBS Publications RepositoryCenter for Integrated Nanostructure Physics(나노구조물리 연구단)1. Journal Papers (저널논문)
Barrier Height at the Graphene and Carbon Nanotube Junction
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- Title
- Barrier Height at the Graphene and Carbon Nanotube Junction
- Author(s)
- Tae Geun Kim; Un Jeong Kim; Si Young Lee; Young Hee Lee; Yun Seop Yu; Sung Woo Hwang; Sangsig Kim
- Publication Date
- 2014-06
- Journal
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.6, pp.2203 - 2207
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Abstract
- Abstract—Graphene/carbon nanotube (CNT) junction barrier height was investigated using all-carbon field-effect transistor structure with graphene and single-walled CNT (SWCNT) network as source (S)/drain (D)/gate electrodes and as channel, respectively. SWCNT network channel was formed by dielectricphoresis process at the prepatterned graphene S/D electrodes. By analyzing the measured current–voltage characteristics by the diode circuit model, the Schottky barrier height at the graphene and CNT junction was found to be approximately 0.5 eV.
- ISSN
- 0018-9383
- Appears in Collections:
- Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
- Files in This Item:
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