IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.6, pp.2203 - 2207
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Abstract—Graphene/carbon nanotube (CNT) junction barrier
height was investigated using all-carbon field-effect transistor
structure with graphene and single-walled CNT (SWCNT) network
as source (S)/drain (D)/gate electrodes and as channel,
respectively. SWCNT network channel was formed by dielectricphoresis
process at the prepatterned graphene S/D electrodes.
By analyzing the measured current–voltage characteristics by the
diode circuit model, the Schottky barrier height at the graphene
and CNT junction was found to be approximately 0.5 eV.