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IBS Publications RepositoryCenter for Integrated Nanostructure Physics(나노구조물리 연구단)1. Journal Papers (저널논문)
Barrier Height at the Graphene and Carbon Nanotube Junction
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Tae Geun Kim | - |
| dc.contributor.author | Un Jeong Kim | - |
| dc.contributor.author | Si Young Lee | - |
| dc.contributor.author | Young Hee Lee | - |
| dc.contributor.author | Yun Seop Yu | - |
| dc.contributor.author | Sung Woo Hwang | - |
| dc.contributor.author | Sangsig Kim | - |
| dc.date.available | 2015-04-20T05:48:33Z | - |
| dc.date.created | 2014-08-11 | - |
| dc.date.issued | 2014-06 | - |
| dc.identifier.issn | 0018-9383 | - |
| dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/998 | - |
| dc.description.abstract | Abstract—Graphene/carbon nanotube (CNT) junction barrier height was investigated using all-carbon field-effect transistor structure with graphene and single-walled CNT (SWCNT) network as source (S)/drain (D)/gate electrodes and as channel, respectively. SWCNT network channel was formed by dielectricphoresis process at the prepatterned graphene S/D electrodes. By analyzing the measured current–voltage characteristics by the diode circuit model, the Schottky barrier height at the graphene and CNT junction was found to be approximately 0.5 eV. | - |
| dc.language | 영어 | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.title | Barrier Height at the Graphene and Carbon Nanotube Junction | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.identifier.wosid | 000338026200087 | - |
| dc.identifier.scopusid | 2-s2.0-84901412792 | - |
| dc.identifier.rimsid | 441 | ko |
| dc.date.tcdate | 2018-10-01 | - |
| dc.contributor.affiliatedAuthor | Si Young Lee | - |
| dc.contributor.affiliatedAuthor | Young Hee Lee | - |
| dc.identifier.doi | 10.1109/TED.2014.2317799 | - |
| dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.6, pp.2203 - 2207 | - |
| dc.relation.isPartOf | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
| dc.citation.title | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
| dc.citation.volume | 61 | - |
| dc.citation.number | 6 | - |
| dc.citation.startPage | 2203 | - |
| dc.citation.endPage | 2207 | - |
| dc.date.scptcdate | 2018-10-01 | - |
| dc.description.wostc | 7 | - |
| dc.description.scptc | 7 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
| dc.subject.keywordPlus | TRANSPARENT | - |
| dc.subject.keywordPlus | DIELECTRICS | - |
| dc.subject.keywordPlus | CONTACT | - |
| dc.subject.keywordPlus | VOLTAGE | - |
| dc.subject.keywordPlus | FILMS | - |
| dc.subject.keywordAuthor | Barrier height | - |
| dc.subject.keywordAuthor | carbon nanotube (CNT) | - |
| dc.subject.keywordAuthor | FET | - |
| dc.subject.keywordAuthor | graphene | - |
| dc.subject.keywordAuthor | SPICE | - |
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