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Enhanced magnetic moment with cobalt dopant in SnS2semiconductor

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Title
Enhanced magnetic moment with cobalt dopant in SnS2semiconductor
Author(s)
Houcine Bouzid; Steven Rodan; Kirandeep Singh; Youngjo Jin; Jinbao Jiang; Duhee Yoon; Hyun Yong Song; Young Hee Lee
Publication Date
2021-05
Journal
APL Materials, v.9, no.5
Publisher
American Institute of Physics Inc.
Abstract
© 2021 Author(s).We report the strong ferromagnetic order in van der Waals (vdW) layered SnS2 induced by cobalt substitution. The single-crystal Co-doped SnS2 grown by a self-flux method reveals a relatively high Curie temperature (TC) of ∼131 K with an in-plane magnetic easy axis and a large saturation magnetization of ∼0.65 emu g-1 for the 2 at. % Co concentration, which is two orders of magnitude larger than the previously reported value for transition-metal-doped SnS2. The average magnetic moment per Co atom, as high as 1.08 μB, is consistent with the calculated value based on density functional theory, i.e., 1 μB, indicating a negligible antiferromagnetic coupling between Co atoms. Magnetoresistance shows a change in sign from positive to negative, which further confirms the ferromagnetic order in Co-doped SnS2. Our s-p hybridized vdW layered SnS2 serves as a host semiconductor material to search for a suitable magnetic dopant with a high magnetic moment and room temperature TC for next-generation spintronics.
URI
https://pr.ibs.re.kr/handle/8788114/9751
DOI
10.1063/5.0048885
ISSN
2166-532X
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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