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Enhanced magnetic moment with cobalt dopant in SnS2semiconductor

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dc.contributor.authorHoucine Bouzid-
dc.contributor.authorSteven Rodan-
dc.contributor.authorKirandeep Singh-
dc.contributor.authorYoungjo Jin-
dc.contributor.authorJinbao Jiang-
dc.contributor.authorDuhee Yoon-
dc.contributor.authorHyun Yong Song-
dc.contributor.authorYoung Hee Lee-
dc.date.accessioned2021-06-11T00:50:14Z-
dc.date.accessioned2021-06-11T00:50:14Z-
dc.date.available2021-06-11T00:50:14Z-
dc.date.available2021-06-11T00:50:14Z-
dc.date.created2021-05-27-
dc.date.issued2021-05-01-
dc.identifier.issn2166-532X-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/9751-
dc.description.abstract© 2021 Author(s).We report the strong ferromagnetic order in van der Waals (vdW) layered SnS2 induced by cobalt substitution. The single-crystal Co-doped SnS2 grown by a self-flux method reveals a relatively high Curie temperature (TC) of ∼131 K with an in-plane magnetic easy axis and a large saturation magnetization of ∼0.65 emu g-1 for the 2 at. % Co concentration, which is two orders of magnitude larger than the previously reported value for transition-metal-doped SnS2. The average magnetic moment per Co atom, as high as 1.08 μB, is consistent with the calculated value based on density functional theory, i.e., 1 μB, indicating a negligible antiferromagnetic coupling between Co atoms. Magnetoresistance shows a change in sign from positive to negative, which further confirms the ferromagnetic order in Co-doped SnS2. Our s-p hybridized vdW layered SnS2 serves as a host semiconductor material to search for a suitable magnetic dopant with a high magnetic moment and room temperature TC for next-generation spintronics.-
dc.language영어-
dc.publisherAmerican Institute of Physics Inc.-
dc.titleEnhanced magnetic moment with cobalt dopant in SnS2semiconductor-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000646353200007-
dc.identifier.scopusid2-s2.0-85105341497-
dc.identifier.rimsid75712-
dc.contributor.affiliatedAuthorHoucine Bouzid-
dc.contributor.affiliatedAuthorSteven Rodan-
dc.contributor.affiliatedAuthorKirandeep Singh-
dc.contributor.affiliatedAuthorYoungjo Jin-
dc.contributor.affiliatedAuthorJinbao Jiang-
dc.contributor.affiliatedAuthorDuhee Yoon-
dc.contributor.affiliatedAuthorHyun Yong Song-
dc.contributor.affiliatedAuthorYoung Hee Lee-
dc.identifier.doi10.1063/5.0048885-
dc.identifier.bibliographicCitationAPL Materials, v.9, no.5-
dc.relation.isPartOfAPL Materials-
dc.citation.titleAPL Materials-
dc.citation.volume9-
dc.citation.number5-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusFE-DOPED SNS2-
dc.subject.keywordPlusRAMAN-SCATTERING-
dc.subject.keywordPlusMONOLAYER MOS2-
dc.subject.keywordPlusFERROMAGNETISM-
dc.subject.keywordPlusWSE2-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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