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나노 구조 물리 연구단
나노구조물리 연구단
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Sub-nanometer Atomic Layer Deposition for Spintronics in Magnetic Tunnel Junctions Based on Graphene Spin-Filtering Membranes

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Title
Sub-nanometer Atomic Layer Deposition for Spintronics in Magnetic Tunnel Junctions Based on Graphene Spin-Filtering Membranes
Author(s)
Martin, MB; Dlubak, B; Weatherup, RS; Heejun Yang; Deranlot, C; Bouzehouane, K; Petroff, F; Anane, A; Hofmann, S; Robertson, J; Fert, A; Seneor, P
Publication Date
2014-08
Journal
ACS NANO, v.8, no.8, pp.7890 - 7895
Publisher
AMER CHEMICAL SOC
Abstract
We report on the successful integration of low-cost, conformal, and versatile atomic layer deposited (ALD) dielectric in NiAl2O3Co magnetic tunnel junctions (MTJs) where the Ni is coated with a spin-filtering graphene membrane. The ALD tunnel barriers, as thin as 0.6 nm, are grown layer-by-layer in a simple, low-vacuum, ozone-based process, which yields high-quality electron-transport barriers as revealed by tunneling characterization. Even under these relaxed conditions, including air exposure of the interfaces, a significant tunnel magnetoresistance is measured highlighting the robustness of the process. The spin-filtering effect of graphene is enhanced, leading to an almost fully inversed spin polarization for the Ni electrode of42%. This unlocks the potential of ALD for spintronics with conformal, layer-by-layer control of tunnel barriers in magnetic tunnel junctions toward low-cost fabrication and down-scaling of tunnel resistances.
URI
https://pr.ibs.re.kr/handle/8788114/939
ISSN
1936-0851
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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