Sub-nanometer Atomic Layer Deposition for Spintronics in Magnetic Tunnel Junctions Based on Graphene Spin-Filtering Membranes
DC Field | Value | Language |
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dc.contributor.author | Martin, MB | - |
dc.contributor.author | Dlubak, B | - |
dc.contributor.author | Weatherup, RS | - |
dc.contributor.author | Heejun Yang | - |
dc.contributor.author | Deranlot, C | - |
dc.contributor.author | Bouzehouane, K | - |
dc.contributor.author | Petroff, F | - |
dc.contributor.author | Anane, A | - |
dc.contributor.author | Hofmann, S | - |
dc.contributor.author | Robertson, J | - |
dc.contributor.author | Fert, A | - |
dc.contributor.author | Seneor, P | - |
dc.date.available | 2015-04-20T05:35:45Z | - |
dc.date.created | 2014-11-12 | - |
dc.date.issued | 2014-08 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/939 | - |
dc.description.abstract | We report on the successful integration of low-cost, conformal, and versatile atomic layer deposited (ALD) dielectric in NiAl2O3Co magnetic tunnel junctions (MTJs) where the Ni is coated with a spin-filtering graphene membrane. The ALD tunnel barriers, as thin as 0.6 nm, are grown layer-by-layer in a simple, low-vacuum, ozone-based process, which yields high-quality electron-transport barriers as revealed by tunneling characterization. Even under these relaxed conditions, including air exposure of the interfaces, a significant tunnel magnetoresistance is measured highlighting the robustness of the process. The spin-filtering effect of graphene is enhanced, leading to an almost fully inversed spin polarization for the Ni electrode of42%. This unlocks the potential of ALD for spintronics with conformal, layer-by-layer control of tunnel barriers in magnetic tunnel junctions toward low-cost fabrication and down-scaling of tunnel resistances. | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | atomic layer deposition . spintronics . spin filter . graphene . dielectrics . magnetic tunnel junction | - |
dc.title | Sub-nanometer Atomic Layer Deposition for Spintronics in Magnetic Tunnel Junctions Based on Graphene Spin-Filtering Membranes | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.wosid | 000340992300033 | - |
dc.identifier.scopusid | 2-s2.0-84906706952 | - |
dc.identifier.rimsid | 16413 | ko |
dc.date.tcdate | 2018-10-01 | - |
dc.contributor.affiliatedAuthor | Heejun Yang | - |
dc.identifier.doi | 10.1021/nn5017549 | - |
dc.identifier.bibliographicCitation | ACS NANO, v.8, no.8, pp.7890 - 7895 | - |
dc.relation.isPartOf | ACS NANO | - |
dc.citation.title | ACS NANO | - |
dc.citation.volume | 8 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 7890 | - |
dc.citation.endPage | 7895 | - |
dc.date.scptcdate | 2018-10-01 | - |
dc.description.wostc | 49 | - |
dc.description.scptc | 51 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | FUTURE | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | OZONE | - |
dc.subject.keywordPlus | CVD | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | spintronics | - |
dc.subject.keywordAuthor | spin filter | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordAuthor | dielectrics | - |
dc.subject.keywordAuthor | magnetic tunnel junction | - |