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Kim, Chanyoung
강상관계 물질 연구단
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Gate-Tunable Reversible Rashba-Edelstein Effect in a Few-Layer Graphene/2H-TaS2 Heterostructure at Room Temperature

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Title
Gate-Tunable Reversible Rashba-Edelstein Effect in a Few-Layer Graphene/2H-TaS2 Heterostructure at Room Temperature
Author(s)
Lijun Li; Jin Zhang; Gyuho Myeong; Wongil Shin; Hongsik Lim; Boram Kim.; Seungho Kim; Taehyeok Jin; Stuart Cavill; Beom Seo Kim; Changyoung Kim; Johannes Lischner; Aires Ferreira; Sungjae Cho
Subject
Rashba−Edelstein effect, spin galvanic effect, spin−orbit coupling, charge-to-spin conversion,, ; graphene/transition-metal dichalcogenide heterostructures, spintronics
Publication Date
2020-05
Journal
ACS NANO, v.14, no.5, pp.5251 - 5259
Publisher
AMER CHEMICAL SOC
Abstract
© 2020 American Chemical Society. We report the observation of current-induced spin polarization, the Rashba-Edelstein effect (REE), and its Onsager reciprocal phenomenon, the spin galvanic effect (SGE), in a few-layer graphene/2H-TaS2 heterostructure at room temperature. Spin-sensitive electrical measurements unveil full spin-polarization reversal by an applied gate voltage. The observed gate-tunable charge-to-spin conversion is explained by the ideal work function mismatch between 2H-TaS2 and graphene, which allows for a strong interface-induced Bychkov-Rashba interaction with a spin-gap reaching 70 meV, while keeping the Dirac nature of the spectrum intact across electron and hole sectors. The reversible electrical generation and control of the nonequilibrium spin polarization vector, not previously observed in a nonmagnetic material, are elegant manifestations of emergent two-dimensional Dirac Fermions with robust spin-helical structure. Our experimental findings, supported by first-principles relativistic electronic structure and transport calculations, demonstrate a route to design low-power spin-logic circuits from layered materials
URI
https://pr.ibs.re.kr/handle/8788114/7869
DOI
10.1021/acsnano.0c01037
ISSN
1936-0851
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > 1. Journal Papers (저널논문)
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