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강상관계물질연구단
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Gate-Tunable Reversible Rashba-Edelstein Effect in a Few-Layer Graphene/2H-TaS2 Heterostructure at Room Temperature

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dc.contributor.authorLijun Li-
dc.contributor.authorJin Zhang-
dc.contributor.authorGyuho Myeong-
dc.contributor.authorWongil Shin-
dc.contributor.authorHongsik Lim-
dc.contributor.authorBoram Kim.-
dc.contributor.authorSeungho Kim-
dc.contributor.authorTaehyeok Jin-
dc.contributor.authorStuart Cavill-
dc.contributor.authorBeom Seo Kim-
dc.contributor.authorChangyoung Kim-
dc.contributor.authorJohannes Lischner-
dc.contributor.authorAires Ferreira-
dc.contributor.authorSungjae Cho-
dc.date.accessioned2020-12-22T03:03:14Z-
dc.date.accessioned2020-12-22T03:03:14Z-
dc.date.available2020-12-22T03:03:14Z-
dc.date.available2020-12-22T03:03:14Z-
dc.date.created2020-06-12-
dc.date.issued2020-05-
dc.identifier.issn1936-0851-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/7869-
dc.description.abstract© 2020 American Chemical Society. We report the observation of current-induced spin polarization, the Rashba-Edelstein effect (REE), and its Onsager reciprocal phenomenon, the spin galvanic effect (SGE), in a few-layer graphene/2H-TaS2 heterostructure at room temperature. Spin-sensitive electrical measurements unveil full spin-polarization reversal by an applied gate voltage. The observed gate-tunable charge-to-spin conversion is explained by the ideal work function mismatch between 2H-TaS2 and graphene, which allows for a strong interface-induced Bychkov-Rashba interaction with a spin-gap reaching 70 meV, while keeping the Dirac nature of the spectrum intact across electron and hole sectors. The reversible electrical generation and control of the nonequilibrium spin polarization vector, not previously observed in a nonmagnetic material, are elegant manifestations of emergent two-dimensional Dirac Fermions with robust spin-helical structure. Our experimental findings, supported by first-principles relativistic electronic structure and transport calculations, demonstrate a route to design low-power spin-logic circuits from layered materials-
dc.description.uri1-
dc.language영어-
dc.publisherAMER CHEMICAL SOC-
dc.subjectRashba−Edelstein effect, spin galvanic effect, spin−orbit coupling, charge-to-spin conversion,-
dc.subjectgraphene/transition-metal dichalcogenide heterostructures, spintronics-
dc.titleGate-Tunable Reversible Rashba-Edelstein Effect in a Few-Layer Graphene/2H-TaS2 Heterostructure at Room Temperature-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000537682300013-
dc.identifier.scopusid2-s2.0-85085531652-
dc.identifier.rimsid72264-
dc.contributor.affiliatedAuthorChangyoung Kim-
dc.identifier.doi10.1021/acsnano.0c01037-
dc.identifier.bibliographicCitationACS NANO, v.14, no.5, pp.5251 - 5259-
dc.citation.titleACS NANO-
dc.citation.volume14-
dc.citation.number5-
dc.citation.startPage5251-
dc.citation.endPage5259-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusSPIN RELAXATION-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusCONVERSION-
dc.subject.keywordPlusEFFICIENT-
dc.subject.keywordPlusSINGLE-
dc.subject.keywordAuthorRashba-Edelstein effect-
dc.subject.keywordAuthorspin galvanic effect-
dc.subject.keywordAuthorspin-orbit coupling-
dc.subject.keywordAuthorcharge-to-spin conversion-
dc.subject.keywordAuthorgraphene/transition-metal dichalcogenide heterostructures-
dc.subject.keywordAuthorspintronics-
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > 1. Journal Papers (저널논문)
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