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나노 구조 물리 연구단
나노구조물리 연구단
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Edge Contact for Carrier Injection and Transport in MoS2 Field-Effect Transistors

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Title
Edge Contact for Carrier Injection and Transport in MoS2 Field-Effect Transistors
Author(s)
Homin Choi; Byoung Hee Moon; Jung Ho Kim; Seok Joon Yun; Gang Hee Han; Sung-gyu Lee; Hamza Zad Gul; Young Hee Lee
Publication Date
2019-11
Journal
ACS NANO, v.13, no.11, pp.13169 - 13175
Publisher
AMER CHEMICAL SOC
Abstract
Copyright © 2019 American Chemical Society.The contact properties of van der Waals layered semiconducting materials are not adequately understood, particularly for edge contact. Edge contact is extremely helpful in the case of graphene, for producing efficient contacts to vertical heterostructures, and for improving the contact resistance through strong covalent bonding. Herein, we report on edge contacts to MoS2 of various thicknesses. The carrier-type conversion is robustly controlled by changing the flake thickness and metal work functions. Regarding the ambipolar behavior, we suggest that the carrier injection is segregated in a relatively thick MoS2 channel; that is, electrons are in the uppermost layers, and holes are in the inner layers. Calculations reveal that the strength of the Fermi-level pinning (FLP) varies layer-by-layer, owing to the inhomogeneous carrier concentration, and particularly, there is negligible FLP in the inner layer, supporting the hole injection. The contact resistance is large despite the significantly reduced contact resistivity normalized by the contact area, which is attributed to the current-crowding effect arising from the narrow contact area.
URI
https://pr.ibs.re.kr/handle/8788114/6799
ISSN
1936-0851
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
Edge Contact_ACS Nano_Young Hee Lee.pdfDownload

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