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Edge Contact for Carrier Injection and Transport in MoS2 Field-Effect Transistors

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dc.contributor.authorHomin Choi-
dc.contributor.authorByoung Hee Moon-
dc.contributor.authorJung Ho Kim-
dc.contributor.authorSeok Joon Yun-
dc.contributor.authorGang Hee Han-
dc.contributor.authorSung-gyu Lee-
dc.contributor.authorHamza Zad Gul-
dc.contributor.authorYoung Hee Lee-
dc.date.available2020-01-31T00:52:54Z-
dc.date.created2019-12-16-
dc.date.issued2019-11-
dc.identifier.issn1936-0851-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/6799-
dc.description.abstractCopyright © 2019 American Chemical Society.The contact properties of van der Waals layered semiconducting materials are not adequately understood, particularly for edge contact. Edge contact is extremely helpful in the case of graphene, for producing efficient contacts to vertical heterostructures, and for improving the contact resistance through strong covalent bonding. Herein, we report on edge contacts to MoS2 of various thicknesses. The carrier-type conversion is robustly controlled by changing the flake thickness and metal work functions. Regarding the ambipolar behavior, we suggest that the carrier injection is segregated in a relatively thick MoS2 channel; that is, electrons are in the uppermost layers, and holes are in the inner layers. Calculations reveal that the strength of the Fermi-level pinning (FLP) varies layer-by-layer, owing to the inhomogeneous carrier concentration, and particularly, there is negligible FLP in the inner layer, supporting the hole injection. The contact resistance is large despite the significantly reduced contact resistivity normalized by the contact area, which is attributed to the current-crowding effect arising from the narrow contact area.-
dc.language영어-
dc.publisherAMER CHEMICAL SOC-
dc.subjectambipolar characteristics-
dc.subjectcurrent crowding-
dc.subjectedge contact-
dc.subjectFermi-level pinning-
dc.subjectmobility-
dc.subjectMoS2 field-effect transistor-
dc.subjectnegative Schottky barrier height-
dc.titleEdge Contact for Carrier Injection and Transport in MoS2 Field-Effect Transistors-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000500650000089-
dc.identifier.scopusid2-s2.0-85075560072-
dc.identifier.rimsid70696-
dc.contributor.affiliatedAuthorHomin Choi-
dc.contributor.affiliatedAuthorByoung Hee Moon-
dc.contributor.affiliatedAuthorJung Ho Kim-
dc.contributor.affiliatedAuthorSeok Joon Yun-
dc.contributor.affiliatedAuthorGang Hee Han-
dc.contributor.affiliatedAuthorSung-gyu Lee-
dc.contributor.affiliatedAuthorHamza Zad Gul-
dc.contributor.affiliatedAuthorYoung Hee Lee-
dc.identifier.doi10.1021/acsnano.9b05965-
dc.identifier.bibliographicCitationACS NANO, v.13, no.11, pp.13169 - 13175-
dc.relation.isPartOfACS NANO-
dc.citation.titleACS NANO-
dc.citation.volume13-
dc.citation.number11-
dc.citation.startPage13169-
dc.citation.endPage13175-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordAuthorambipolar characteristics-
dc.subject.keywordAuthorcurrent crowding-
dc.subject.keywordAuthoredge contact-
dc.subject.keywordAuthorFermi-level pinning-
dc.subject.keywordAuthormobility-
dc.subject.keywordAuthorMoS2 field-effect transistor-
dc.subject.keywordAuthornegative Schottky barrier height-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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