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나노 구조 물리 연구단
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Carrier multiplication in van der Waals layered transition metal dichalcogenides

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Title
Carrier multiplication in van der Waals layered transition metal dichalcogenides
Author(s)
Ji-Hee Kim; Matthew R. Bergren; Jin Cheol Park; Subash Adhikari; Michael Lorke; Thomas Frauenheim; Duk-Hyun Choe; Beom Kim; Hyunyong Choi; Tom Gregorkiewicz; Young Hee Lee
Publication Date
2019-12
Journal
NATURE COMMUNICATIONS, v.10, no.1, pp.5488 -
Publisher
NATURE PUBLISHING GROUP
Abstract
© 2019, The Author(s).Carrier multiplication (CM) is a process in which high-energy free carriers relax by generation of additional electron-hole pairs rather than by heat dissipation. CM is promising disruptive improvements in photovoltaic energy conversion and light detection technologies. Current state-of-the-art nanomaterials including quantum dots and carbon nanotubes have demonstrated CM, but are not satisfactory owing to high-energy-loss and inherent difficulties with carrier extraction. Here, we report CM in van der Waals (vdW) MoTe2 and WSe2 films, and find characteristics, commencing close to the energy conservation limit and reaching up to 99% CM conversion efficiency with the standard model. This is demonstrated by ultrafast optical spectroscopy with independent approaches, photo-induced absorption, photo-induced bleach, and carrier population dynamics. Combined with a high lateral conductivity and an optimal bandgap below 1 eV, these superior CM characteristics identify vdW materials as an attractive candidate material for highly efficient and mechanically flexible solar cells in the future
URI
https://pr.ibs.re.kr/handle/8788114/6754
ISSN
2041-1723
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
Carrier multiplication_Nature Communications_Young Hee Lee.pdfDownload

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