BROWSE

Related Scientist

cinap's photo.

cinap
나노구조물리연구단
more info

ITEM VIEW & DOWNLOAD

Carrier multiplication in van der Waals layered transition metal dichalcogenides

DC Field Value Language
dc.contributor.authorJi-Hee Kim-
dc.contributor.authorMatthew R. Bergren-
dc.contributor.authorJin Cheol Park-
dc.contributor.authorSubash Adhikari-
dc.contributor.authorMichael Lorke-
dc.contributor.authorThomas Frauenheim-
dc.contributor.authorDuk-Hyun Choe-
dc.contributor.authorBeom Kim-
dc.contributor.authorHyunyong Choi-
dc.contributor.authorTom Gregorkiewicz-
dc.contributor.authorYoung Hee Lee-
dc.date.available2020-01-31T00:51:47Z-
dc.date.created2019-12-16-
dc.date.issued2019-12-
dc.identifier.issn2041-1723-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/6754-
dc.description.abstract© 2019, The Author(s).Carrier multiplication (CM) is a process in which high-energy free carriers relax by generation of additional electron-hole pairs rather than by heat dissipation. CM is promising disruptive improvements in photovoltaic energy conversion and light detection technologies. Current state-of-the-art nanomaterials including quantum dots and carbon nanotubes have demonstrated CM, but are not satisfactory owing to high-energy-loss and inherent difficulties with carrier extraction. Here, we report CM in van der Waals (vdW) MoTe2 and WSe2 films, and find characteristics, commencing close to the energy conservation limit and reaching up to 99% CM conversion efficiency with the standard model. This is demonstrated by ultrafast optical spectroscopy with independent approaches, photo-induced absorption, photo-induced bleach, and carrier population dynamics. Combined with a high lateral conductivity and an optimal bandgap below 1 eV, these superior CM characteristics identify vdW materials as an attractive candidate material for highly efficient and mechanically flexible solar cells in the future-
dc.description.uri1-
dc.language영어-
dc.publisherNATURE PUBLISHING GROUP-
dc.titleCarrier multiplication in van der Waals layered transition metal dichalcogenides-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000500477700001-
dc.identifier.scopusid2-s2.0-85076019713-
dc.identifier.rimsid70771-
dc.contributor.affiliatedAuthorJi-Hee Kim-
dc.contributor.affiliatedAuthorMatthew R. Bergren-
dc.contributor.affiliatedAuthorJin Cheol Park-
dc.contributor.affiliatedAuthorSubash Adhikari-
dc.contributor.affiliatedAuthorYoung Hee Lee-
dc.identifier.doi10.1038/s41467-019-13325-9-
dc.identifier.bibliographicCitationNATURE COMMUNICATIONS, v.10, no.1, pp.5488-
dc.citation.titleNATURE COMMUNICATIONS-
dc.citation.volume10-
dc.citation.number1-
dc.citation.startPage5488-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
Files in This Item:
Carrier multiplication_Nature Communications_Young Hee Lee.pdfDownload

qrcode

  • facebook

    twitter

  • Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
해당 아이템을 이메일로 공유하기 원하시면 인증을 거치시기 바랍니다.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse