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나노 구조 물리 연구단
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Long-range ferromagnetic ordering in vanadium-doped WSe2 semiconductor

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Title
Long-range ferromagnetic ordering in vanadium-doped WSe2 semiconductor
Author(s)
Dinh Loc Duong; Seok Joon Yun; Youngkuk Kim; Seong-Gon Kim; Young Hee Lee
Publication Date
2019-12
Journal
APPLIED PHYSICS LETTERS, v.115, no.24, pp.242406 -
Publisher
AMER INST PHYSICS
Abstract
© 2019 Author(s).We report long-range ferromagnetic ordering in a vanadium-doped monolayer WSe2 semiconductor using spin-polarized density functional calculations. We found that the vanadium dopant is located in the fully occupied state inside the valence band, inherent from spin-orbit coupling, leading to the presence of free holes in the valence band. As a consequence, the spin-polarized hole carriers are delocalized not only in the vanadium site but also persistently in the tungsten sites distant from vanadium to facilitate the long-range ferromagnetic ordering in the vanadium-doped monolayer WSe2. Our findings of this study pave the way for the future exploration of carrier-mediated room-temperature two-dimensional ferromagnetic semiconductors via magnetic dopants
URI
https://pr.ibs.re.kr/handle/8788114/6711
ISSN
0003-6951
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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